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  avalanche-rugged Datasheet PDF File

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. IRFM120ATFNL
OCR Text avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current : 10 a (max.) @ v ds = 100v lower r ds(on) : ...
Description 100V N-Channel A-FET / Substitute of IRFM120

File Size 293.19K  /  8 Page

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    FSB147HNY

List of Unclassifed Manufacturers
Part No. FSB147HNY
OCR Text ...th rich features ? internal avalanche-rugged 700 v sensefet ? built-in 5 ms soft-start ? peak-current-mode control ? cycle-by-cycle current limiting ? leading-edge blanking (leb) ? synchronized slope compensation ? p...
Description Meets 2013 ErP Standby Power Regulation (Less than 0.5 W Consumption with 0.25 W Load) for ATX Power and LCD TV Power

File Size 880.26K  /  18 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. SSP2N80A
OCR Text ...e 2. drain 3. source 3 2 1 avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current : 25 m a (max.) @ v ...
Description 2 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 256.28K  /  7 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. IRFW740S
OCR Text ...50 300 0.93 40 62.5 -- -- -- avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current: 10 m a (max.) @ v ds ...
Description 400V N-Channel Power MOSFET(婕???靛?涓?00V??娌??澧?己?????OS?烘?搴??)

File Size 238.96K  /  7 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. SFU2955TU
OCR Text avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current : 10 m a (max.) @ v ds = -60v lower r ds(on) ...
Description 7.6 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251

File Size 306.39K  /  9 Page

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Part No. IRFS720A
OCR Text avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current : 10 a (max.) @ v ds = 400v lower r ds(on) :...
Description TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-220AB

File Size 257.65K  /  7 Page

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