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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
IRFM120ATFNL
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| OCR Text |
avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current : 10 a (max.) @ v ds = 100v lower r ds(on) : ... |
| Description |
100V N-Channel A-FET / Substitute of IRFM120
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| File Size |
293.19K /
8 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
SSP2N80A
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| OCR Text |
...e 2. drain 3. source 3 2 1 avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current : 25 m a (max.) @ v ... |
| Description |
2 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
256.28K /
7 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
IRFW740S
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| OCR Text |
...50 300 0.93 40 62.5 -- -- -- avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current: 10 m a (max.) @ v ds ... |
| Description |
400V N-Channel Power MOSFET(婕???靛?涓?00V??娌??澧?己?????OS?烘?搴??)
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| File Size |
238.96K /
7 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
SFU2955TU
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| OCR Text |
avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current : 10 m a (max.) @ v ds = -60v lower r ds(on) ... |
| Description |
7.6 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
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| File Size |
306.39K /
9 Page |
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it Online |
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| Part No. |
IRFS720A
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| OCR Text |
avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current : 10 a (max.) @ v ds = 400v lower r ds(on) :... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-220AB
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| File Size |
257.65K /
7 Page |
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it Online |
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Price and Availability
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