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    2SC5005 2SC5005-T1 2SC5005NE58119

NEC Corp.
NEC[NEC]
Part No. 2SC5005 2SC5005-T1 2SC5005NE58119
OCR Text ... DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount as...250 .258 .267 .275 .285 .293 .302 S12 aNG 72.7 61.1 52.6 46.6 43.1 39.8 36.5 32.9 30.5 27.3 24.2 21....
Description    NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD
Discrete

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    2SC5009 2SC5009-T1 2SC5009-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text ...high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surfac...250 .226 .208 .188 .170 .151 .136 .121 .109 .099 .090 .086 .083 S21 aNG -5.7 -13.2 -20.0 -26.5 -...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD

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    2SC5010 2SC5010-T1 2SC5010-T1-T2

NEC Corp.
Part No. 2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text ...high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surfac...250 .258 .267 .277 .288 .300 .312 .321 .335 S21 aNG -14.2 -28.4 -41.9 -54.9 -66.5 -77.0 -86.4 -9...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD
128 x 128 pixel format, LED or EL Backlight available

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ... 10 V, IC = 7 ma,f = 1.0 GHz a a *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter...250 2 2SC5011 TYPICaL CHaRaCTERISTICS (Ta = 25 C) TOTaL POWER DISSIPaTION vs. aMBIENT TEMPER...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ...= 8 V, IC = 7 ma,f = 1.0 GHz a a *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter...250 2 2SC5012 TYPICaL CHaRaCTERISTICS (Ta = 25 C) TOTaL POWER DISSIPaTION vs. aMBIENT TEMPER...
Description HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ...= 6 V, IC = 5 ma,f = 2.0 GHz a a *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter...250 2 2SC5013 TYPICaL CHaRaCTERISTICS (Ta = 25 C) TOTaL POWER DISSIPaTION vs. aMBIENT TEMPER...
Description L BaND, Si, NPN, RF SMaLL SIGNaL TRaNSISTOR
HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ... 3 V, IC = 3 ma, f = 2.0 GHz a a Noise Figure NF 1.5 2.5 dB *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2...250 .248 .254 .262 .264 aNG -15.0 -29.7 -41.9 -53.1 -63.9 -72.9 -81.9 -88.9 -96.5 -105.0 -111.5 -118...
Description Discrete
HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

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    2SC5019

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5019
OCR Text ...F dB dB dB min typ max 1 1 Unit a a V V 2.50.1 +0.25 1 Transistor PC -- Ta 1.4 2SC5019 IC -- VCE 24 Ta=25C 20 IB=200a 100 120 VCE=8V IC -- VBE Collector power dissipation PC (W) 1.2 Collector current IC (ma) ...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

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    2SC5026

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5026
OCR Text ... 150 -55 ~ +150 1cm2 Unit V V V a a W C C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg markin...250 Transition frequency fT (MHz) 0.3 1 3 10 30 10 3 25C 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 Ta...
Description Silicon NPN epitaxial planer type(For low-frequency output amplification)

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    2SC5049

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Toshiba Semiconductor
Part No. 2SC5049
OCR Text ...0.8 -- -- 2.5 pF GHz dB dB Unit a ma a Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 ma VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 10 ma VCE = 5 V, IC = 10 ma, f = 900 MHz VCE = 5 V, IC = 5 ma...
Description Silicon NPN Epitaxial npn型硅外延

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