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  800v 12a Datasheet PDF File

For 800v 12a Found Datasheets File :: 230    Search Time::2.266ms    
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    2SC5681

Sanyo Semicon Device
Part No. 2SC5681
OCR Text ...S VCEO(sus) IEBO Conditions VCB=800v, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit A mA V mA ...12a IC=10.8A, IB=2.7A IC=10.8A, IB=2.7A IC=7A, IB1=1.4A, IB2=--2.8A IC=7A, IB1=1.4A, IB2=--2.8A Cond...
Description Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

File Size 28.72K  /  4 Page

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    SGD02N120 SGP02N120 SGB02N120 SGI02N120

INFINEON[Infineon Technologies AG]
Part No. SGD02N120 SGP02N120 SGB02N120 SGI02N120
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 7A 60W 6A 50W 5A 4A 3A 2A 1A 0A 25C 40W 30W 20W 10W 0W 25C IC, CO...
Description Fast S-IGBT in NPT-technology

File Size 389.46K  /  13 Page

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    IRFMG50

International Rectifier
Part No. IRFMG50
OCR Text ...50A VDS > 15V, IDS = 3.5A VDS= 800v ,VGS=0V VDS = 800v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID =5.6A VDS = 400V VDD = 400V, ...12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. D...
Description 1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA)

File Size 136.83K  /  7 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SC5639
OCR Text ...IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800v, IE=0 hFE1 hFE2 VCE=5V, IC=1A VCE=5V, IC=16A Conditions Ratings min 800 1.0 10 20 4 30 7 typ max 1.0 Un...12a, IB1=2.4A, IB2=-4.8A IC=12a, IB1=2.4A, IB2=-4.8A 0.1 Conditions Ratings min typ max 5 1.5 3.0 0....
Description Horizontal Deflection Switching Transistors
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

File Size 41.50K  /  4 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SC5683
OCR Text ...S VCEO(sus) IEBO Conditions VCB=800v, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 800 1.0 Ratings min typ max 10 1.0 Unit A mA V mA ...12a, IB1=2.4A, IB2=--4.8A IC=12a, IB1=2.4A, IB2=--4.8A Conditions Ratings min 15 4 7 3 1.5 3.0 0.2 V...
Description Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

File Size 28.72K  /  4 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090BFLL03
OCR Text ...te Voltage Drain Current (VDS = 800v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = V...12a @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 12a @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN

File Size 94.01K  /  5 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL03 APT10090BLLG
OCR Text ...te Voltage Drain Current (VDS = 800v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = V...12a @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 12a @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @ 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3

File Size 93.49K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT1201R2SFLL APT1201R2BFLL
OCR Text ...INDUCTIVE SWITCHING @ 25C VDD = 800v, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 800v, VGS = 15V ID = 12a, RG = 5 ID = 12a, RG = 5 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 M...
Description 12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 TO-247, 3 PIN
POWER MOS 7 FREDFET

File Size 156.87K  /  5 Page

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    MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Part No. APT12040JFLL
OCR Text ...INDUCTIVE SWITCHING @ 25C VDD = 800v, VGS = 15V ID = 30A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 800v, VGS = 15V ID = 30A, RG = 5 Char...12a GS ID, DRAIN CURRENT (AMPERES) 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 1...
Description 24 A, 1200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 FREDFET

File Size 107.83K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT22F120L APT22F120B2
OCR Text ...F 5 VGS = 0V, VDS = 0V to 800v Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge ...12a, VDS = 600V Resistive Switching VDD = 800v, ID = 12a RG = 2.2 6 , VGG = 15V 125 260 42 120 45...
Description N-Channel FREDFET

File Size 388.41K  /  4 Page

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For 800v 12a Found Datasheets File :: 230    Search Time::2.266ms    
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