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Rakon France SAS
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| Part No. |
102S42E300KV4W 102S42E300KV6E 102S42E300KV3E 102S42E300KV6Z 102S42E300KV3U 102S42E300KV6U 102S42E300KV3Z 102S42E1R3DG4E 251R15S3R3DG4E 501S42E1R3DG4E 501S42E4R3DG4E
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| OCR Text |
... v 160 = 16 v 250 = 25 v 500 = 50 v 251 = 250 v 501 = 500 v 102 = 1000 v 152 = 1500 v 202 = 2000 v 252 = 2500 v 362 = 3600 v 502 = 5000 v ...1000v 0.3 0r3 16 v 25 v 50 v 250 v 250 v 500v 1000v 0.4 0r4 16 v 25 v 50 v 250 v 250 v 500v 1000v 0.... |
| Description |
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, C0G, 0.00003 uF, SURFACE MOUNT, 1111 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, C0G, 0.0000013 uF, SURFACE MOUNT, 1111 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 250 V, C0G, 0.0000033 uF, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 500 V, C0G, 0.0000013 uF, SURFACE MOUNT, 1111 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 500 V, C0G, 0.0000043 uF, SURFACE MOUNT, 1111 CHIP, ROHS COMPLIANT
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| File Size |
835.49K /
10 Page |
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TT electronics Semelab, Ltd.
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| Part No. |
BUZ50B-220MR1 BUZ50A-220MR1
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| OCR Text |
... 1.5(0.53) 10.6 (0.42) 12.70 (0.50 min) 2.54 (0.1) bsc 3.70 dia. nom 1 2 3 0.8 (0.03) 2.70 (0.106) 1.0 (0.039) 4.6 (0.18) 10.6 (0.42) to220...1000v v gs = 0v t j = 100 c v gs = 20v v ds = 0 v ds = v gs i d = 1.0ma t j = 100 c v gs = 10v i d... |
| Description |
1.5 A, 1000 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB HERMETIC SEALED, METAL, TO-220M, 3 PIN
1 A, 1000 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB HERMETIC SEALED, METAL, TO-220M, 3 PIN
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| File Size |
17.02K /
2 Page |
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FUJI ELECTRIC CO LTD
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| Part No. |
ERA22-02 ERA22-06
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| OCR Text |
...3 1.0 0.5 0.1 0.05 0.03 100 50 30 10 5 3 1.0 0.5 0.3 0.1 0.05 0.03 3 1.0 0.5 0.1 0.05 0.03 0 0.2 0....1000v / 0.5a ) ?p?^?@? discontinued product.
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| Description |
0.5 A, 200 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
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| File Size |
62.60K /
3 Page |
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Mitsubishi Electric Corporation
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| Part No. |
QM50HY-2H
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| OCR Text |
... value ratings 1000 1000 1000 7 50 50 400 3 500 C40~+150 C40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 unit v v v v a a w a a c c v nm...1000v, v eb =2v v cb =1000v, emitter open v eb =7v i c =50a, i b =1a Ci c =50a (diode forward voltag... |
| Description |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
75.63K /
5 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
QM50DY-2H
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| OCR Text |
... value ratings 1000 1000 1000 7 50 50 400 3 500 C40~+150 C40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 unit v v v v a a w a a c c v nm...1000v, v eb =2v v cb =1000v, emitter open v eb =7v i c =50a, i b =1a Ci c =50a (diode forward voltag... |
| Description |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
77.35K /
5 Page |
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it Online |
Download Datasheet |
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