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IRF[International Rectifier]
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| Part No. |
IRLIZ34NPBF
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| OCR Text |
...
1000
100
100
VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V TOP
10
10
1
1
2.0V
0.1
0.1
0.01...12a. Unclamped Inductive Test Circuit
50
V(BR)DSS tp VDD VDS
0
VDD = 25V
25 50 75 100 1... |
| Description |
HEXFET Power MOSFET
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| File Size |
252.63K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRL3215PBF
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| OCR Text |
....5V 5.5V 3V 5.0v 2.75V BOTTOM 2.50V BOTTOM 4.5V TOP TOP
10
I D , Drain-to-Source Current (A)
1
I D , Drain-to-Source Current (A)...12a
I D , Drain-to-Source Current (A)
2.5
TJ = 175 C
1
2.0
1.5
1.0
0.5
0.1... |
| Description |
HEXFET Power MOSFET
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| File Size |
171.33K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRLU3110ZPBF IRLR3110ZPBF
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| OCR Text |
...6V VGS = -16V ID = 38A nC VDS = 50V VGS = 4.5V VDD = 50V ID = 38A ns RG = 3.7 VGS = 4.5V D Between lead,
e e
e e
nH
6mm (0.25in....12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
I AS
Fig 12b. Unclamped Inductive Waveforms... |
| Description |
AUTOMOTIVE MOSFET
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| File Size |
734.03K /
11 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHYS67234CM IRHYS63234CM
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| OCR Text |
...C, IF = 12a, di/dt 100A/s VDD 50V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
-- -- --... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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| File Size |
188.86K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUFA76619D3S HUFA76619D3
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| OCR Text |
....0mA (Figures 14, 19, 20) VDD = 50V, ID = 18A VGS = 10V, RGS = 12 (Figures 16, 21, 22) VDD = 50V, ID = 12a VGS = 4.5V, RGS = 12 (Figures 15, 21, 22) 10 82 32 42 137 111 ns ns ns ns ns ns
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time ... |
| Description |
18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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| File Size |
212.57K /
10 Page |
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it Online |
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TT electronics Semelab, Ltd.
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| Part No. |
IRF9530SMDR4
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| OCR Text |
... ds = v gs i d = -250 a v ds -50v i ds = -7a v ds = -100v v ds = -80v t j = 150c v gs = -20v v gs = 20v v gs = 0 v ds = -25v f = 1mhz v gs = -10v i d = -12a v ds = 0.8bv dss v dd = -50v i d = -12a r g = 12 ? r d = 3.9 ? i s = -12a v gs = ... |
| Description |
12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB HERMEITC SEALED, SMD 1, 3 PIN
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| File Size |
20.40K /
2 Page |
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IRF[International Rectifier]
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| Part No. |
IRFB4103PBF
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| OCR Text |
... --- nH --- pF V GS = 0V V DS = 50V ns
Conditions
V GS = 0V, ID = 250A V GS = 10V, ID = 12a
V m V mV/C A nA S
V/C Reference to 25C, ID = 1mA
e
V DS = V GS, ID = 250A V DS = 200V, V GS = 0V V DS = 200V, V GS = 0V, T J = 125... |
| Description |
DIGITAL AUDIO MOSFET
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| File Size |
236.51K /
7 Page |
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it Online |
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