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				SHARP[Sharp Electrionic Components]
Part No.	LH28F004SU-Z9
OCR Text	4M (512 x 8) Flash Memory TOP VIEW * 512K x 8 Word Configuration * 2.7 V Write/Erase Operation (5 V 0.5 V VPP, 3.0 V 0.3 V VCC, +15...bit) block erasable non-volatile random access memory organized as 512K x 8. The LH28F004SU includes...
Description	4M (512 】 8) Flash Memory 4M (512 8) Flash Memory
File Size	185.42K / 31 Page	View it Online	Download Datasheet

				Sharp Corporation Sharp Electrionic Components
Part No.	LH28F004SU-Z9
OCR Text	4M (512 x 8) Flash Memory TOP VIEW * 512K x 8 Word Configuration * 2.7 V Write/Erase Operation (5 V 0.5 V VPP, 3.0 V 0.3 V VCC, +15...bit) block erasable non-volatile random access memory organized as 512K x 8. The LH28F004SU includes...
Description	4M (512 × 8) Flash Memory 4M (512 8) Flash Memory 4M (512 bb 8) Flash Memory
File Size	191.90K / 31 Page	View it Online	Download Datasheet

				Sharp Corporation Sharp Electrionic Components
Part No.	LH28F004SU-LC
OCR Text	4M (512K x 8) Flash Memory TOP VIEW * 512K x 8 Word Configuration * 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) - No Requirement for...bit Systems Erase All Unlocked Blocks Writing of memory data is performed typically within 20 s. ...
Description	4M (512K × 8) Flash Memory 4M (512K 8) Flash Memory 4M (512K bb 8) Flash Memory
File Size	253.40K / 31 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1416JV18
OCR Text	... circuitry. 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36) 300 MHz clock for high bandwidth 2-word burst for reducing address bus fre...bit of the address internally is a "0," only 21 external address inputs are needed to access the ent...
Description	(CY7C14xxJV18) 36-Mbit DDR-II SRAM 2-Word Burst Architecture
File Size	468.67K / 26 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LRS1331
OCR Text	...acked Chip 16M Flash Memory and 4M SRAM - Thirty-one 32K-word main blocks - Bottom boot location - Extended cycling capability - 100,000 bl...bit flash memory and 262,144 x 16-bit static RAM in one package. PIN CONFIGURATION 72-BALL FBGA ...
Description	Stacked Chip 16M Flash Memory and 4M SRAM
File Size	213.86K / 26 Page	View it Online	Download Datasheet

				Infineon
Part No.	HYB39S64400BT-7.5 HYB39S64800BT-7.5 HYB39S64800BT-8 HYB39S64160BT-8 HYB39S64160BT-75 HYB39S64400BT-8 INFINEONTECHNOLOGIESAG-Q67100-Q1838
OCR Text	...tsop-54-2 (400mil) 133mhz 4b 4m x4 sdram hyb 39s64400bt-8 q67100-q1838 p-tsop-54-2 (400mil) 125mhz 4b 4m x4 sdram hyb 39s64800bt-7.5 q...bit column decoder sense amplifier & i(o) bus row decoder array column decoder bank 1 array memory 4...
Description	64M SDRAM Component
File Size	410.89K / 53 Page	View it Online	Download Datasheet

				FUJITSU[Fujitsu Media Devices Limited]
Part No.	MBM29F033C MBM29F033C-12 MBM29F033C-12PTN MBM29F033C-12PTR MBM29F033C-70 MBM29F033C-70PTN MBM29F033C-70PTR MBM29F033C-90 MBM29F033C-90PTN MBM29F033C-90PTR
OCR Text	4M x 8) BIT MBM29F033C-70/-90/-12 s FEATURES * Single 5.0 V read, write, and erase Minimizes system level power requirements * Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior...
Description	32M (4M X 8) BIT
File Size	279.56K / 46 Page	View it Online	Download Datasheet

				Elpida Memory, Inc.
Part No.	PD45128163G5-A10LI-9JF PD45128163G5-A80LI-9JF PD45128441G5-A80LI-9JF PD45128841G5-A80LI-9JF PD45128163G5-A75LI-9JF PD45128441G5-A75LI-9JF PD45128841G5-A10LI-9JF PD45128841G5-A75LI-9JF PD45128441G5-A10LI-9JF PD45128441G5-A10I-9JF PD45128163G5-A10I-9JF PD45128841G5-A10I-9JF PD45128441G5-A75I-9JF PD45128163G5-A75I-9JF PD45128841G5-A75I-9JF ELPIDAMEMORYINC.-PD45128841G5-A80LI-9JF PD45128163G5-A80I-9JF PD45128163-I
OCR Text	...requency MHz (MAX.) 133 125 100 4M x 8 x 4 133 125 100 2M x 16 x 4 133 125 100 8M x 4 x 4 133 125 100 4M x 8 x 4 133 125 100 2M x 16 x 4 133...bit organization. Column Address is determined by A0 - A9, A11 at the CLK rising edge in the read or...
Description	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range) 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行，LVTTL水树（宽温度范围 Hook-Up Wire; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Color:Yellow; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes Hook-Up Wire; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Color:Orange; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
File Size	702.29K / 89 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	HYB39S64400CT-7.5 HYB39S64800CT-7.5 HYB39S64800CTL-8 HYB39S64400CT-8 HYB39S64800CT-8
OCR Text	...sop-54-2 (400mil) 133 mhz 4b 4m x4 sdram hyb 39s64400ct-8 pc100-222 p-tsop-54-2 (400mil) 125 mhz 4b 4m x4 sdram hyb 39s64800ct-7.5 pc1...bit column decoder sense amplifier & i(o) bus row decoder array column decoder bank 1 array memory 4...
Description	64M SDRAM Component 64-MBit Synchronous DRAM
File Size	399.42K / 52 Page	View it Online	Download Datasheet

				Macronix International
Part No.	MX23C4100
OCR Text	4m-bit [512K x 8/256K x 16] MASK ROM FEATURES * Switchable organization - 512K x 8 (byte mode) - 256K x 16 (word mode) * Single +5V power supply * Fast access time:100/120/150ns * * * * * Totally static operation Completely TTL compatible...
Description	4m-bit [512K x 8/256K x 16] MASK ROM
File Size	459.20K / 8 Page	View it Online	Download Datasheet

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