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  4.5-ch Datasheet PDF File

For 4.5-ch Found Datasheets File :: 34372    Search Time::2.64ms    
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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ...RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -8 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode ABSOLUTE MAXIMUM RATIN...5 C/W C/W The information in this document is subject to change without notice. Document No. D...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...NSIONS (in millimeter) 10.00.3 4.50.2 3.20.2 2.70.2 15.00.3 30.1 40.2 FEATURES * Super Low On-State Resistance RDS(on)1 = 50 m: M...5 MIN. 12.00.2 ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage Gate to Source Vol...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ...millimeter) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES * Super Low On-State Resistance 3 0.1 4 0.2 RDS(on)2 = 56 m MAX. (VGS = -4 V, ID = -15 A) * Low Ciss Ciss = 4120 pF TYP. * Built-in Gate Protection Diode ABSOLUTE MAXIM...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text ... 0.8 -1 -0.3 -0.1 DC 0.4 er at Operation in ion this area is limited by R DS(on) Op 10 10 s PW 1 0 = ms s (1 10 m sh s ot...5 V -4 V -10 -3.5 V (A) -8 Ta = 25C Pulse Test -3 V -4 Typical Transfer Characteristics V DS = -1...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ...ics -50 -10 V -8 V I D (A) -40 -4.5 V -6 V -5 V -4 V -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 Pulse Test (A) -50 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ...d switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ505(L), 2SJ505(S) Absolut...5 V Pulse Test -5 V -8 V -80 -4 V -60 -3.5 V -40 -3 V -20 VGS = -2.5 V 0 -4 -8 -12 Drain to Source V...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ... devices. Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute ...5 -2 -1 -0.5 -0.2 -0.1 10 s Channel Dissipation Drain Current 20 DC =1 Op 1...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ....11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220FM D G 12 S 1. Gate 2. Drain 3. ...5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.11 0.16 8 580 300 85 10 55 85 60 -1.2 60 Max -- --...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ...0.3 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline DPAK-1 4 4 D 12 G 3 S 12 3 1....5 -20 -5 -5 2.1 20 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ...sistance RDS(on) = 0.17 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12 S 3 1....5.0 400 220 75 10 40 75 65 -1.1 65 Max -- -- -10 10 -2.0 0.22 0.37 -- -- -- -- -- -- -- -- -- -- Uni...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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For 4.5-ch Found Datasheets File :: 34372    Search Time::2.64ms    
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