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Freescale
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| Part No. |
AOD4156
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| OCR Text |
...t a =25c unless otherwise noted 30v g d s v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r ...20a gate source charge gate drain charge total gate charge r ds(on) static drain-source on-resistanc... |
| Description |
30v N-Channel MOSFET
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| File Size |
437.51K /
7 Page |
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NXP Semiconductors N.V.
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| Part No. |
PSMN7R0-30YLC
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| OCR Text |
...ource voltage 25 c t j 175c --30v i d drain current t mb =25c; v gs =10v; see figure 1 --61a p tot total power dissipation t mb = 25 c; ...20a; t j =25c; see figure 12 -7.68.9m ? v gs =10v; i d =20a; t j =25c; see figure 12 -67.1m ?
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| Description |
N-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technology
N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology
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| File Size |
312.19K /
15 Page |
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it Online |
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Silikron Semiconductor ...
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| Part No. |
SSFD6035
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| OCR Text |
...citance c oss 300 pf v =-30v,v reverse transfer capacitance c rss ds gs =0v, f=1.0mhz 205 pf switching characteristics (note...20a,v =-10v gs 10 nc body diode reverse recovery time t 40 ns rr i f =-20a, di/dt=100a/... |
| Description |
High Power and current handing capability
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| File Size |
293.64K /
7 Page |
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it Online |
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Advanced Power Electronics
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| Part No. |
AP95T06GS-HF-3
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| OCR Text |
...5a. 4.starting t j =25c , v dd =30v , l=1mh , r g =25 w , ias=30a. 5.surface-mounted on 1 in 2 copper pad of fr4 board source-drain diode...20a - - 12 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward trans... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
105.84K /
6 Page |
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it Online |
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Price and Availability
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