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PEREGRINE SEMICONDUCTOR CORP
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| Part No. |
PE4249-02
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| OCR Text |
...1 db compression 2,4 1000 mhz 30 33 dbm input ip2 2 1000 mhz 80 dbm input ip3 2 1000 mhz 50 dbm video feedthrough 3 ...ohm impedance switch ? non-reflective at rf1, open reflective at rf2 when off ? 75-ohm (0.25 wa... |
| Description |
0 MHz - 1300 MHz RF/MICROWAVE SGL POLE SGL THROW SWITCH, 1 dB INSERTION LOSS
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| File Size |
352.88K /
7 Page |
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it Online |
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SamHop
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| Part No. |
STM102D
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| OCR Text |
...j , t stg www.samhop.com.tw nov,30,2011 1 details are subject to change without notice. 62.5 thermal resistance, junction-to-ambient r ja a ...ohm v gs =10v , i d =1.0a v ds =10v , i d =1.0a input capacitance output capacitance dynamic charact... |
| Description |
Dual Enhancement Mode Field Effect Transistor
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| File Size |
131.88K /
11 Page |
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it Online |
Download Datasheet |
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IRF
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| Part No. |
G4PH40KD
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| OCR Text |
...5c continuous collector current 30 i c @ t c = 100c continuous collector current 15 i cm pulsed collector current 60 a i lm clamped ind...ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 15a cc ge... |
| Description |
IRG4PH40KD
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| File Size |
237.17K /
10 Page |
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it Online |
Download Datasheet |
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SUMITOMO
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| Part No. |
ELM5964-10F
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| OCR Text |
...70 -65 -60 -55 -50 -45 -40 -35 -30 23 25 27 29 31 33 output power [s.c.l](dbm) i m d ( d b c ) 5.725ghz 6.075ghz 6.425ghz 28 30 32 34 36 38 40 42 44 18 20 22 24 26 28 30 32 34 input power(dbm) o u t p u t p o w e r ( d b m ) 0 10 20 30 40 ... |
| Description |
C-Band Internally Matched FET
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| File Size |
357.63K /
5 Page |
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it Online |
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Motorola
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| Part No. |
EB105
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| OCR Text |
30 w a tt , 800 mhz amplifier design prepared by: alan w ood semiconductor product sector introduction simplicity and compactness mark the d...ohm source and be terminated in a nominal 50 ohm load. both input and output matching networks are ... |
| Description |
800MHz AMPLIFIER
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| File Size |
205.22K /
5 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
SP8009
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| OCR Text |
...-55 to 150 i d units parameter 30 24 72 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics absolute maximum...ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
77.42K /
6 Page |
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it Online |
Download Datasheet |
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