3.9ghz pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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3.9ghz Datasheet PDF File

For 3.9ghz Found Datasheets File :: 812 Search Time::2.484ms
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				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181W Q62702-F1501
OCR Text	...P 181W RFs Q62702-F1501 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 24 dB 20 10V 3V 2V 16 14 12 10 8 6 1V 0.7V Power Gain Gma, Gms = f(IC) f =...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	59.99K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181 Q62702-F1271
OCR Text	...FP 181 RFs Q62702-F1271 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 24 10V 5V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 dB ...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	61.12K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF7168C 7168CT_N
OCR Text	...RES - Low voltage operation Vd=3.2V - High output power Po=33dBm (typ.) @1710~1785MHz Po=33dBm (typ.) @1850~1910MHz - High efficiency Id=12...9GHz band handheld phone QUALITY GRADE - GG *Mitsubishi Electric Corporation puts the maximum...
Description	UHF BAND GaAs POWER AMPLIFIER From old datasheet system
File Size	75.54K / 12 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF7169C 7169CT_N
OCR Text	...RES Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.85~1.91GHz Low distortion : ACP=-46dBc max. @Po=28dBm High effic...9GHz band handheld phone QUALITY GRADE GG Block Diagram of this IC and Application Circuit Ex...
Description	From old datasheet system UHF BAND GaAs POWER AMPLIFIER
File Size	348.24K / 20 Page	View it Online	Download Datasheet

				njr
Part No.	NJG1528KC1
OCR Text	...TL=2.8V FLP10-C1 (Package size: 3.0x2.8x0.75mm) nPIN CONFIGURATION KC1Type (Top View) Orientation Mark 1 2 3 4 5 10 9 8 7 6 Pin...9GHz, PIN=31dBm f=0.9GHz, PIN=31dBm f=1.9GHz, PIN=25dBm f=0.9GHz, PIN=31dBm f=0.9GHz, PIN=31dBm f=1....
Description	DPDT SWITCH GaAs MMIC
File Size	418.63K / 10 Page	View it Online	Download Datasheet

				Analog Devices, Inc. AD[Analog Devices]
Part No.	AD8314 AD8314ARM AD8314ARM-REEL AD8314ARM-REEL7 AD8314-EVAL ANALOGDEVICESINC.-AD8314-EVAL
OCR Text	...g a 5 pF capacitor to a load of 3 k in shunt with 2 pF. This high-pass coupling, with a corner at 16 MHz, determines the lowest operating fr...9GHz 0.8 1.9GHz 0.6 2.5GHz ERROR - dB VUP - Volts 1 0 -1 -2 0.2 -3 -4 -70 1.9GHz 0.1GHz 2.5GHz 0....
Description	100 MHz-2500 MHz 45 dB RF Detector/Controller
File Size	274.61K / 16 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB420 BGB420E6327
OCR Text	...t * Typical supply voltage: 1.4-3.3V * SIEGET(R)-25 technology Bias,4 Bias C,3 Description SIEGET(R)-25 NPN Transistor with integra...9GHz f=1.8GHz f=0.9GHz f=1.8GHz f=0.9GHz f=1.8GHz Symbol GMA \|S21\|2 IL F50 min. 16.0 typ. 17.5 22 16...
Description	Active Biased Transistor Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 MMIC, LNA
File Size	436.18K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB540
OCR Text	...oscillators Bias,4 Bias C,3 Description SIEGET(R)-45 NPN Transistor with integrated biasing for high gain low noise figure applicat...9GHz f=1.8GHz f=0.9GHz f=1.8GHz f=0.9GHz f=1.8GHz Symbol Gms \|S21\|2 IL F50 P-1dB 12 10 OIP3 22 20 CC...
Description	Active Biased RF Transistor Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343
File Size	95.55K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
Part No.	MGF7124A 7124A
OCR Text	...0/-4V Pi 2 7 VG1 VGdual 3 6 VD1 NU 4 5 VG2 Po 8.4 12.2 VD2 APPLICATION Base-station of Japanese personal handyphone sy...9GHz,/4DQPSK VGdual=0/-4V,PO=26dBm,f=1.9GHz PO=26dBm,f(ACP)=600kHz, f=1.9GHz,/4DQPSK PO=26dBm,f(ACP)...
Description	From old datasheet system 1.9GHz BAND AMPLIFIER MMIC
File Size	8.30K / 1 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	MGF7170AC
OCR Text	...ES -Low voltage operation : Vd=3.0V -High output power : Po=28dBm typ. @f=1.715~1.78GHz -Low distortion : ACP=-46dBc max. @Po=28dBm -High e...9GHz band handheld phone Pi : RF input Po : RF output Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg : ...
Description	UHF BAND GaAs POWER AMPLIFIER
File Size	301.85K / 16 Page	View it Online	Download Datasheet

For 3.9ghz Found Datasheets File :: 812 Search Time::2.484ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |