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SamHop Microelectronics...
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| Part No. |
STUD426S
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| OCR Text |
...s d d typ s tu/d426s oct,2007 8 3 50 40 20 53 20 -55 to 175 50 a 100 parameter symbol unit drain-s ource voltage v ds v g ate-s ource voltag...6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v... |
| Description |
Super high dense cell design for low RDS (ON).
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| File Size |
111.06K /
9 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD428S
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| OCR Text |
...tance, junction-to-ambient r jc 3 50 r ja /w c /w c 40 parameter symbol limit unit drain-source voltage v ds gate-source voltag e 20 v gs v ...6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v... |
| Description |
S uper high dense cell design for low R DS (ON).
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| File Size |
92.04K /
9 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD435S
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| OCR Text |
...tion-to-ambient r ja t c =25 c 3 c/w thermal resistance, junction-to-case r jc a t c =70 c -30.4 t c =70 c w 42 156 g r p p r p p ver 1.0...6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-19a,v gs =-10v fall time turn-... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
107.28K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD438S
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| OCR Text |
...tance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy c t c =70...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
109.42K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD441S
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| OCR Text |
...tion-to-ambient r ja t c =25 c 3 c/w thermal resistance, junction-to-case r jc a t c =70 c -21.6 t c =70 c w 42 a a 49 green product
sy...6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-13.5a,v gs =-10v fall time tur... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
119.75K /
8 Page |
View
it Online |
Download Datasheet |
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|
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SamHop Microelectronics...
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| Part No. |
STUD442S
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| OCR Text |
...tance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
119.69K /
8 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD449S
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| OCR Text |
...ckage. -40 -24 -73 20 -19 27 50 3 42 symbol v ds v gs i dm a i d units parameter v v gate-source voltage drain-source voltage absolute maxim...6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-12a,v gs =-10v fall time turn-... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
121.03K /
8 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD452S
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| OCR Text |
...tance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
122.98K /
8 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD456A
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| OCR Text |
...tance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
118.51K /
10 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD456S
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| OCR Text |
...tance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
120.25K /
8 Page |
View
it Online |
Download Datasheet |
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