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  3.6-4.2ghz Datasheet PDF File

For 3.6-4.2ghz Found Datasheets File :: 1719    Search Time::11.313ms    
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    Sanyo
Part No. 2SC4660
OCR Text ... 1.0 4.0 1.0 [2SC4660] 1.4 3.3 3.0 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to...
Description NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Driver Applications

File Size 93.51K  /  3 Page

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    2SC5473 2SC547

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5473 2SC547
OCR Text ...A mW C C 1:Emitter 2:Collector 3:Emitter 4:Base EIAJ:SC-82 S-Mini Type Package Marking symbol : 3A s Electrical Characteristics P...6 120 -25C 6 4 80 4 40 2 2 0 0.1 0 0.3 1 3 10 30 100 1 3 10 30 100 ...
Description Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

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    2SC5474 2SC547

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5474 2SC547
OCR Text ... 1.00.1 0.5 1 0.5 3 2 0.450.1 0.3 0.750.15 (Ta=25C) Ratings 9 6 1 30 125 125 -55 ~ +125 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector Parameter Collector to base voltage Collector to emitter voltage Emitte...
Description Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

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    Intersil
Part No. ISL3990
OCR Text .... . . . . . . . . . . . 2.7V to 3.6V * Output Power . . . . . . . . . . . . . . . . . . . . . . . . . 21dBm (Typ) * Power Gain. . . . . . . ...6 GND 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Hand...
Description Dual Band Power Amplifier

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    njr
Part No. NJG1516KC1
OCR Text ...7V min. 36dBm typ.@f=2GHz, VCTL=3.0V 0.4dB typ. @f=1GHz, Pin=31dBm, VCTL=3V 0.4dB typ. @f=1GHz, Pin=34.5dBm, VCTL=3.5V 0.7dB typ. @f=2GHz, P...6 Pin Connection 1.P1 2.GND 3.GND 4.GND 5.P2 6.VCTL2 7.GND 8.PC 9.GND 10.VCTL1 nTRUTH TABLE "H...
Description
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    njr
Part No. NJG1532KB2
OCR Text ...g frequency range from 50MHz to 3.0GHz at low voltage of 2.5V. The ultra small & ultra thin FLP6 package is applied. Reversed logic version ...6 5 nPACKAGE OUTLINE NJG1532KB2 +2.5~+6.5V 0.3dB typ. @f=1GHz, PIN=0dBm 0.5dB typ. @f=2GHz,...
Description SPDT SWITCH GaAs MMIC

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    FMM5046VF

Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
Part No. FMM5046VF
OCR Text ... 8 10 IDS(RF) (A) 22 20 2.3 Input Power (dBm) Frequency (GHz) 2 FMM5046VF GaAs MMIC S11 S22 +j100 2.0 1.9 1.8 2.1 2.2 2...6 2.1 1.7 2.7GHz 2.7GHz 2.2 10 25 2.6 2.3 2.5 2.4 +j250 2.6 2.4 2.7GHz 2.4 2.7GHz 2.0 2.3 1...
Description From old datasheet system
GaAs MMIC

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    ISL3690 ISL3690IR ISL3690IR-TK

Intersil, Corp.
Intersil Corporation
Part No. ISL3690 ISL3690IR ISL3690IR-TK
OCR Text ... . . . . . . . . . . . . 2.7 to 3.3V * Noise figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.4dB * TX OFDM Output Pow...6 5 4 3 2 LNA_VCC 17 LNA_GND 18 LB_SHIELD 19 BB_OVLD LB_LNA_IN+ 20 LB_LNA_IN- 21 HB_S...
Description Dual Band Direct Conversion Transceiver 双波段直接转换收发器
DIODE ZENER SINGLE 1000mW 7.5Vz 34mA-Izt 0.05 10uA-Ir 5Vr DO41-GLASS 5K/REEL

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    EPA1200A

Excelics Semiconductor, Inc.
ETC
List of Unclassifed Manufacturers
Part No. EPA1200A
OCR Text ... -8V -3V Vgs Drain Current Idss 3.5A Ids Forward Gate Current 600mA 100mA Igsf Input Power 37dBm @ 3dB Compression Pin o Channel Temperature...6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: --- S11 --MAG ANG 0.966 -161.3 0.96...
Description High Efficiency Heterojunction Power FET

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    MT4S100T

TOSHIBA[Toshiba Semiconductor]
Part No. MT4S100T
OCR Text ... 2 1 Type name 2 3 3 4 Maximum Ratings (Ta = 25C) Characteristics Collector-Base voltage Collector-Emitter voltage ...6 3 1.2 15 7 45 150 -55~150 Unit V V V mA mA mW C C TESQ JEDEC JEITA TOSHIBA Weight: 0.0015 g - ...
Description UHF LOW NOISE AMPLIFIER APPLICATION

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