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  3.3-3.8ghz Datasheet PDF File

For 3.3-3.8ghz Found Datasheets File :: 1089    Search Time::3.218ms    
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    MC10EL31 MC100EL31 ON0666

ONSEMI[ON Semiconductor]
Part No. MC10EL31 MC100EL31 ON0666
OCR Text ... X Q L H H L Undef CLK 3 R 6 Q R 4 5 VEE Z = LOW to HIGH Transition 12/93 (c) Motorola, Inc. 1995 3-1 REV 2 MC10EL31 MC100EL31 DC CHARACTERISTICS (VEE = VEE(min) to VEE(max); VCC = GND) -40C S...
Description From old datasheet system
D Flip-Flop With Set and Reset

File Size 72.87K  /  3 Page

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    SA8025A SA8025ADK

PHILIPS[Philips Semiconductors]
Part No. SA8025A SA8025ADK
OCR Text ...on are realized by a high speed 3-wire serial interface. A 1GHz version (SA7025DK) is also available with the same pinout. PIN CONFIGURATION DK Package CLOCK DATA STROBE VSS RFIN RFIN VCCP REFIN RA AUXIN VDD TEST LOCK RF RN VDDA PHP PH...
Description Low-voltage 1.8GHz fractional-N synthesizer

File Size 456.88K  /  23 Page

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    SP8802 SP8802A SP8802ADG DES9066101 DES9066101AC DES9066101DGAZ

MITEL[Mitel Networks Corporation]
Mitel Semiconductor
Mitel Networks, Corp.
Part No. SP8802 SP8802A SP8802ADG DES9066101 DES9066101AC DES9066101DGAZ
OCR Text 3.3GHz / 2 fixed Modulus Divider Advance Information DS2111 Issue 7.2 June 1999 Features q q q q q q q q Very High Speed Operation 3.3GHz Silicon Technology for low Phase Noise (Typically better than -140dBc/Hz at 10kHz) Specified O...
Description 6.5V; 420mW; 3.3GHz 2fixed modulus divider
3.3GHz ÷ 2 fixed Modulus Divider
3.3GHz 2 fixed Modulus Divider
3.3GHz ± 2 fixed Modulus Divider 3.3GHz ± 2个固定的模数分频

File Size 92.91K  /  5 Page

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    SP8804 SP8804A SP8804ADG DES9056701 DES9056701AC DES9056701DGAZ

Mitel Networks, Corp.
Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. SP8804 SP8804A SP8804ADG DES9056701 DES9056701AC DES9056701DGAZ
OCR Text 3.3GHz / 4 fixed Modulus Divider Advance Information DS2112 Issue 7.3 June 1999 Features q q q q q q q q Ordering Information SP8804/A/DG Military temperature range DES9056701/AC/DGAZ (SMD) Very High Speed Operation 3.3GHz Silic...
Description 3.3GHz ± 4 fixed Modulus Divider 3.3GHz ± 4个固定的模数分频
3.3GHz 4 fixed Modulus Divider
3.3GHz ÷ 4 fixed Modulus Divider

File Size 93.67K  /  5 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280W Q62702-F1504
OCR Text ...P 280W REs Q62702-F1504 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation S...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

File Size 59.70K  /  7 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280 Q62702-F1378
OCR Text ...FP 280 REs Q62702-F1378 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation S...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管(对于低噪音,在移动通信系统的低功耗放大器
NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems)
From old datasheet system

File Size 60.12K  /  7 Page

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    2SC5502

Sanyo Semicon Device
Part No. 2SC5502
OCR Text ...mm 2161 [2SC5502] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 0.65 0.5 2.0 0.425 1.25 2.1 0 to 0.1 0.2 0.15 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Volt...
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

File Size 43.12K  /  6 Page

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    BFP640

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BFP640
OCR Text ... Outstanding noise figure F = 1.3 dB at 6 GHz * High maximum stable gain Gms = 24 dB at 1.8 GHz * Gold metallization for extra high reliability * 70 GHz fT -Silicon Germanium technology ESD: Electrostatic discharge sensitive device, observe...
Description    NPN Silicon Germanium RF Transistor

File Size 270.21K  /  8 Page

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    BFR340F

INFINEON[Infineon Technologies AG]
Part No. BFR340F
OCR Text ...lifiers and oscillators 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR340F Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Em...
Description RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators

File Size 150.45K  /  8 Page

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For 3.3-3.8ghz Found Datasheets File :: 1089    Search Time::3.218ms    
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