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  288.0mhz Datasheet PDF File

For 288.0mhz Found Datasheets File :: 211    Search Time::0.718ms    
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    K6R4008C1D

Samsung semiconductor
Part No. K6R4008C1D
OCR Text ... access memory organized as 524,288 words by 8 bits. the k6r4008c1d uses 8 common input and output lines and has an output enable pin which ...0mhz) * capacitance is sampled and not 100% tested. item symbol test conditions typ max unit input/o...
Description 512Kx8 Bit High Speed Static RAM(5.0V Operating)

File Size 238.32K  /  10 Page

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    K6R4008V1C

Samsung semiconductor
Part No. K6R4008V1C
OCR Text ... access memory organized as 524,288 words by 8 bits. the k6r4008v1c uses 8 common input and output lines and has an output enable pin which ...0mhz, cs 3 v cc -0.2v, v in 3 v cc -0.2v or v in 0.2v norrmal - 10 l-ver. - 1.2 output low voltag...
Description 512Kx8 Bit High Speed Static

File Size 173.76K  /  9 Page

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    K6R4008V1D

SAMSUNG[Samsung semiconductor]
Part No. K6R4008V1D
OCR Text ... Access Memory organized as 524,288 words by 8 bits. The K6R4008V1D uses 8 common input and output lines and has an output enable pin which ...0MHz, CSVCC-0.2V, VINVCC-0.2V or VIN0.2V IOL=8mA IOH=-4mA 8ns 10ns 8ns 10ns Test Conditions Min -2 -...
Description 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

File Size 237.20K  /  10 Page

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    K6R4008V1B K6R4008V1B-C10 K6R4008V1B-C12 K6R4008V1B-C15 K6R4008V1B-I10 K6R4008V1B-I12 K6R4008V1B-I15

Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K6R4008V1B K6R4008V1B-C10 K6R4008V1B-C12 K6R4008V1B-C15 K6R4008V1B-I10 K6R4008V1B-I12 K6R4008V1B-I15
OCR Text ... Access Memory organized as 524,288 words by 8 bits. The K6R4008V1B uses 8 common input and output lines and has an output enable pin which ...0MHz, CSVCC-0.2V, VINVCC-0.2V or VIN 0.2V IOL=8mA IOH=-4mA Normal L-Ver. Test Conditions Min -2 -2 2...
Description From old datasheet system
CMOS SRAM CMOS SRAM

File Size 212.77K  /  10 Page

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    K6R4008V1C-C K6R4008V1C-C10 K6R4008V1C-C12 K6R4008V1C-C15 K6R4008V1C-I K6R4008V1C-I10 K6R4008V1C-I12 K6R4008V1C-I15 K6R4

Samsung semiconductor
Part No. K6R4008V1C-C K6R4008V1C-C10 K6R4008V1C-C12 K6R4008V1C-C15 K6R4008V1C-I K6R4008V1C-I10 K6R4008V1C-I12 K6R4008V1C-I15 K6R4008V1C-L K6R4008V1C-P
OCR Text ... Access Memory organized as 524,288 words by 8 bits. The K6R4008V1C uses 8 common input and output lines and has an output enable pin which ...0MHz, CSVCC-0.2V, VINVCC-0.2V or VIN0.2V IOL=8mA IOH=-4mA Norrmal L-Ver. Test Conditions Min -2 -2 2...
Description 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

File Size 135.55K  /  9 Page

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    K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008C1C-C15 K6R4008C1C-E K6R4008C1C-E10 K6R4008C1C-E12 K6R4008C1C-E15 K6R4

Samsung semiconductor
Part No. K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008C1C-C15 K6R4008C1C-E K6R4008C1C-E10 K6R4008C1C-E12 K6R4008C1C-E15 K6R4008C1C-I K6R4008C1C-I10 K6R4008C1C-I12 K6R4008C1C-I15 K6R4008C1C-TC12
OCR Text ... Access Memory organized as 524,288 words by 8 bits. The K6R4008C1C uses 8 common input and output lines and has an output enable pin which ...0MHz, CSVCC-0.2V, VINVCC-0.2V or VIN0.2V IOL=8mA IOH=-4mA IOH1=-0.1mA Test Conditions Min -2 -2 2.4 ...
Description CMOS SRAM
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.

File Size 130.78K  /  9 Page

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    AP2608AGK-HF14 AP2608AGK-HF

Advanced Power Electronics Corp.
Part No. AP2608AGK-HF14 AP2608AGK-HF
OCR Text ...nput capacitance v gs =0v - 180 288 pf c oss output capacitance v ds =15v - 17 - pf c rss reverse transfer capacitance f=1.0mhz - 13 - pf r g gate resistance f=1.0mhz - 3.3 6.6 source-drain diode symbol parameter test conditions min. typ. ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 87.53K  /  4 Page

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    Advanced Power Electron...
Part No. AP60T10GS-HF
OCR Text ...halogen-free product -55 to 150 288 maximum thermal resistance, junction-ambient (pcb m ount) 4 drain-source voltage 100 g d s g d s to-220(...0mhz - 155 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forwar...
Description Fast Switching Characteristic

File Size 51.89K  /  5 Page

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