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NTE[NTE Electronics]
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| Part No. |
NTE6154 NTE6165 NTE6155 NTE6164 NTE6163 NTE6162 NTE6156 NTE6159
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| OCR Text |
...d Voltage Drop (TC =+ 25C, IO = 200a), VF . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1V Maximum Reverse Current (FCA @ +150C), IR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Maximum I2t for F... |
| Description |
Silicon industrial rectifier, 150 Amp, general purpose. Anode to case. Peak revrese voltage 1000V.
Silicon industrial rectifier, 150 Amp, general purpose. Cathode to case. Peak revrese voltage 1400V.
Silicon industrial rectifier, 150 Amp, general purpose. Cathode to case. Peak revrese voltage 1600v.
Silicon Industrial Rectifier / 150 Amp / General Purpose
Silicon industrial rectifier, 150 Amp, general purpose. Anode to case. Peak revrese voltage 400V.
Silicon industrial rectifier, 150 Amp, general purpose. Anode to case. Peak revrese voltage 1400V.
Silicon industrial rectifier, 150 Amp, general purpose. Cathode to case. Peak revrese voltage 600V.
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| File Size |
20.42K /
2 Page |
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Microsemi
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| Part No. |
APTGT100TL170G
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| OCR Text |
...fe operating area t j = 125c 200a @ 1600v these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt... |
| Description |
Three Level Inverter
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| File Size |
385.90K /
8 Page |
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it Online |
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Microsemi
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| Part No. |
APTGT100DH170G
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| OCR Text |
...fe operating area t j = 125c 200a @ 1600v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note ap... |
| Description |
Asymmetrical Bridge
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| File Size |
331.12K /
6 Page |
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it Online |
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Microsemi
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| Part No. |
APTGT100H170G
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| OCR Text |
...fe operating area t j = 125c 200a @ 1600v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note ap... |
| Description |
Full Bridge
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| File Size |
335.60K /
6 Page |
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it Online |
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Micro Commercial Compon...
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| Part No. |
MT60C12T1 MT60C16T1 MT60C18T1 MT60C08T1
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| OCR Text |
...max. units v tm t=25 i tm =200a 1.65 v i rrm /i drm vj =t vjm t ,v r =v rrm ,v d =v drm 15 ma v to for power-loss calculations only (t vj =125 ) 0.9 v r t vj =t vjm t 3.5 m ? v gt t vj =25 , v d =6v 3.0 v i g... |
| Description |
60 Amp THYRISTOR MODULE 800~1800 Volts
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| File Size |
679.97K /
5 Page |
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it Online |
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NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
PCH20016 PCH20012
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| OCR Text |
200a / 1200 to 1600v
PCH20012
PCH20016
FEATURES
* Isolated Base * Thyristor and Diode Cathode Common Circuit * High Surge Capability * UL Recognized, File No. E187184
OUTLINE DRAWING
PCH
TYPICAL APPLICATIONS
* Rectified Fo... |
| Description |
THYRISTOR MODULE 200a/1200 to 1600v
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| File Size |
250.37K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
APTC60HM70BT3G
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| OCR Text |
...i f = 30a v r = 400v di/dt =200a/s t j = 125c 480 nc r thjc junction to case thermal resistance 1.2 c/w 3. by pass ...1600v t j = 125c 2 ma t j = 25c 1.3 v f forward voltage i f = 40a t j = 125c 1.1... |
| Description |
Full Bridge PFC
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| File Size |
588.24K /
13 Page |
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it Online |
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