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200-mhz Datasheet PDF File

For 200-mhz Found Datasheets File :: 124333 Search Time::2.078ms
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				ON Semiconductor
Part No.	NJD1718T4G
OCR Text	... ? 1 a i b = ? 50 ma, r b = 200 ????? ????? t on ??? ??? ? ???? ???? 55 ??? ??? ? ??? ??? ??? ??? ??? ns ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 320 ??? ??? ??? ? ????? ????? t f ??? ??? ? ???? ???? 40 ??? ??? ? 1. pulse tes...
Description	Power Transistors
File Size	104.77K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMST5550 PMST5551
OCR Text	...-65 - -65 140 160 6 300 600 100 200 +150 150 +150 V V V mA mA mA mW C C C CONDITIONS open emitter - - 160 180 V V MIN. MAX. UNIT 1999 Apr...MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz IC = 200 A; VCE = 5 V; R...
Description	NPN high-voltage transistors
File Size	61.29K / 7 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SB1181 2SB1260 2SB1241
OCR Text	...GAIN : hFE Ta=25C -100 200 100 50 VCE=-3V -10 -1V -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER ...MHz) Ta=25C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -1 -2 -5 -10 -20 -50-100-200-500-1000-2000 ...
Description	Power Transistor
File Size	78.57K / 3 Page	View it Online	Download Datasheet

				Micronetics, Inc.
Part No.	SMN7106 SMN7106-D1C
OCR Text	200 KHZ TO 12 MHZ D ESCRIPTION The SMN7106 noise module is designed for a wide range of applications. It features high noise output amplitude for uses ranging from encryption to jamming. All biasing and amplification circuitry is built-in...
Description	SURFACE MOUNT AMPLIFIED NOISE SOURCE
File Size	587.90K / 3 Page	View it Online	Download Datasheet

				Semikron International
Part No.	SEMIX302GB126HDS08
OCR Text	...c = 25 C Tc = 80 C 1200 311 218 200 400 -20 ... 20 10 -40 ... 150 Tc = 25 C Tc = 80 C 292 202 200 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 2...MHz f = 1 MHz f = 1 MHz 14.4 0.75 0.65 1600 3.75 320 50 30 600 100 26 0.12 Tj = 25 C Tj = 125 C 5 1....
Description	Trench IGBT Modules
File Size	135.55K / 5 Page	View it Online	Download Datasheet

				Productwell Precision Elect.CO.,LTD
Part No.	SCDR322520-5R6 SCDR321618-100M SCDR321618-101M SCDR321618-120M SCDR321618-150M SCDR321618-180M SCDR321618-1R0 SCDR321618-1R2 SCDR321618-1R5 SCDR321618-1R8 SCDR321618-220M SCDR321618-270M SCDR321618-2R2 SCDR321618-2R7 SCDR321618-330M SCDR321618-390M SCDR321618-3R3 SCDR321618-3R9 SCDR321618-470M SCDR321618-4R7 SCDR321618-560M SCDR321618-5R6 SCDR321618-680M SCDR321618-6R8 SCDR321618-820M SCDR321618-8R2 SCDR321618-R15 SCDR321618-R22 SCDR321618-R33 SCDR321618-R47 SCDR321618-R56 SCDR322520-100K SCDR322520-101K SCDR322520-120K SCDR322520-150K SCDR575047-100 SCDR575047-101 SCDR575047-102 SCDR575047-103 SCDR575047-150 SCDR575047-151 SCDR575047-152 SCDR575047-1R0 SCDR575047-1R5 SCDR575047-220 SCDR575047-221 SCDR575047-222 SCDR575047-2R2 SCDR575047-330 SCDR575047-331 SCDR575047-332 SCDR575047-3R3 SCDR575047-470 SCDR575047-471 SCDR575047-472 SCDR575047-4R7 SCDR575047-680 SCDR575047-681 SCDR575047-682 SCDR575047-6R8 SCDR575047-822 SCDR575047-R12 SCDR575047-R27 SCDR575047-R47 SCDR453226-820K SCDR322520-180K SCDR322520-1R0 SCDR322520-1R2 SCDR322520-1R5 SCDR322520-1R8 SCDR322520-220K SCDR322520-270K SCDR322520-2R2 SCDR322520-2R7 SCDR322520-330K SCDR322520-390K SCDR322520-3R3 SCDR453226-470K SCDR45
OCR Text	... IDC max(mA) 250 240 230 215 200 190 185 175 165 155 150 140 135 130 125 120 115 110 105 100 95 90 85 85 85 80 55 55 50 50 45 45 Q (mi...MHz) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Q TEST FREQ (MHz) 2.52 2.52 ...
Description	UNSHIELDED SMD CHIP CHOKES
File Size	119.96K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMEM4020PD
OCR Text	...; IB = -100 mA IC = -2 A; IB = -200 mA VBEsat RCEsat VBEon fT base-emitter saturation voltage equivalent on-resistance base-emitter turn-on ...MHz - - - 300 300 250 160 50 - - - - - - - 150 PARAMETER CONDITIONS MIN. PMEM4020PD TYP. - - -...
Description	PNP transistor/Schottky-diode module
File Size	100.99K / 11 Page	View it Online	Download Datasheet

				California Eastern Laboratories
Part No.	NE662M16-T3-A
OCR Text	...rent at v cb = 5v, i e = 0 na 200 i ebo emitter cutoff current at v eb = 1 v, i c = 0 na 200 h fe forward current gain 2 at v ce = 2 v...mhz pf 0.14 0.24 electrical characteristics (t a = 25 c) notes: 1. electronic industrial associat...
Description	NPN SILICON HIGH FREQUENCY TRANSISTOR
File Size	175.28K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMEM4020ND
OCR Text	...1 A; IB = 100 mA IC = 2 A; IB = 200 mA VBEsat RCEsat VBEon fT Cc base-emitter saturation voltage equivalent on-resistance base-emitter turn-...MHz VCB = 10 V; IE = 0; ie = 0; f = 1 MHz - - - - 300 300 200 75 - - - - - - - 150 - PARAMETER CONDI...
Description	NPN transistor/Schottky-diode module
File Size	100.79K / 11 Page	View it Online	Download Datasheet

				飞思卡尔半导体(中国)有限公司
Part No.	MRF1517NT1
OCR Text	... 0 4 12 600 1000 80 2 4 6 10 18 200 50 12 p out , output power (watts) 200 1000 400 600 p out , output power (watts) 6910 7 678 10 3 1 2 6 eff, drain efficiency (%) 50 70 500 mhz 520 mhz 480 mhz 56 47910 8 16 68 791011 70 20 500 mhz 520 mhz...
Description	RF Power Field Effect Transistor
File Size	279.15K / 15 Page	View it Online	Download Datasheet

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