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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
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| Part No. |
IRF234 IRF235 IRF236 IRF237
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| OCR Text |
...
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow prop...75 0.6 180 -55 to 150 300 260 IRF235 250 250 6.5 4.1 26 20 75 0.6 180 -55 to 150 300 260 IRF236 275 ... |
| Description |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| File Size |
68.51K /
7 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
IRF9520 FN2281
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| OCR Text |
..., VGS = 0V TC = 125oC MIN -100 -2 -6 0.9 VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of...75 100 TA , CASE TEMPERATURE (oC) 125 150
1.2
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC)... |
| Description |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
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| File Size |
57.36K /
7 Page |
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it Online |
Download Datasheet
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Intersil, Corp. INTERSIL[Intersil Corporation]
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| Part No. |
IRF9540 RF1S9540SM FN2282
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| OCR Text |
...nt On-State Drain Current (Note 2) Gate to Source Leakage Current
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) ...75 100 TC , CASE TEMPERATURE (oC)
150
175
0 25
75
125
175
TC, CASE TEMPERATURE ... |
| Description |
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
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| File Size |
59.17K /
7 Page |
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it Online |
Download Datasheet
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Price and Availability
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