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INTERSIL[Intersil Corporation]
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| Part No. |
FSS9230R4 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 FSS9230R3
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| OCR Text |
...ion 1999
File Number
4081.2
3-203
FSS9230D, FSS9230R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified FSS9230D, ...Event Effects (SEB, SEGR) (Note 4)
ENVIRONMENT (NOTE 5) ION SPECIES Ni Br Br Br Br NOTES: 4. Testin... |
| Description |
4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 4A/ -200V/ 1.60 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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| File Size |
44.55K /
8 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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| Part No. |
FSTJ9055R4 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ9055R FSTJ9055R1 FSTJ9055R3
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| OCR Text |
...C TC = 25oC TC = 125oC MIN -60 -2.0 -1.0 TYP VGS = 0V to -20V VGS = 0V to -12V VGS = 0V to -2V VDD = -30V, ID = 62A ID = 62A, VDS = -15V VDS...Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area... |
| Description |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 62 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
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| File Size |
71.30K /
8 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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| Part No. |
FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3
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| OCR Text |
... 370 MAX 5.0 4.0 25 250 100 200 2.34 0.055 0.086 40 130 75 35 200 130 5.5 28 75 0.83 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC ...Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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| File Size |
57.05K /
8 Page |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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| Part No. |
FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FSYA254R1 FSYA254R3
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| OCR Text |
...21A, RL = 6.0, VGS = 12V, RGS = 2.35
4-2
FSYA254D, FSYA254R
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse R...Event Effects (SEB, SEGR)
Note 4 ENVIRONMENT (NOTE 5) APPLIED VGS BIAS (V) -20 -5 -10 -15 -20 (NO... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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| File Size |
55.31K /
8 Page |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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| Part No. |
FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3
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| OCR Text |
...e TA17667.
S
Packaging
SMD-2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. ...Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) ION SPECIES Ni Br Br Br Br NOTES: 4. Testing ... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET
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| File Size |
48.34K /
8 Page |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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| Part No. |
FSYC264R4 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
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| OCR Text |
...e TA17668.
S
Package
SMD-2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. ...Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) ION SPECIES Ni Br Br Br Br NOTES: 4. Testing ... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 34 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
47.77K /
8 Page |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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| Part No. |
FSYE13A0R4 FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
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| OCR Text |
... TYP MAX 5.0 4.0 25 250 100 200 2.32 VGS = 0V to 20V VGS = 0V to 12V VGS = 0V to 2V VDD = 50V, ID = 12A ID = 12A, VDS = 15V VDS = 25V, VGS =...Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
55.19K /
8 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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| Part No. |
FSYE23A0R4 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
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| OCR Text |
...0 50 MAX 5.0 4.0 25 250 100 200 2.77 0.33 0.538 15 30 45 20 57 38 1.9 7.4 20 3.0 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC V pF...Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 8 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
57.42K /
8 Page |
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