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  2-event Datasheet PDF File

For 2-event Found Datasheets File :: 38664    Search Time::2.437ms    
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    INTERSIL[Intersil Corporation]
Part No. FSS9230R4 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 FSS9230R3
OCR Text ...ion 1999 File Number 4081.2 3-203 FSS9230D, FSS9230R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSS9230D, ...Event Effects (SEB, SEGR) (Note 4) ENVIRONMENT (NOTE 5) ION SPECIES Ni Br Br Br Br NOTES: 4. Testin...
Description    4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
4A/ -200V/ 1.60 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

File Size 44.55K  /  8 Page

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    ESD7181-16

ON Semiconductor
Part No. ESD7181-16
OCR Text ...resistance: < 1 ? iec61000?4?2 level 4 esd protection ? sz prefix for automotive and other applications requiring unique site and control...event to as low a voltage as possible. the esd clamping voltage is the voltage drop across the esd p...
Description Low Capacitance ESD Protection Diodes

File Size 112.07K  /  6 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSTJ9055R4 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ9055R FSTJ9055R1 FSTJ9055R3
OCR Text ...C TC = 25oC TC = 125oC MIN -60 -2.0 -1.0 TYP VGS = 0V to -20V VGS = 0V to -12V VGS = 0V to -2V VDD = -30V, ID = 62A ID = 62A, VDS = -15V VDS...Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area...
Description Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 62 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

File Size 71.30K  /  8 Page

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    AAT3681 AAT3681IJS-4.2-1-T1 AAT3681IJS-4.2-T1

Advanced Analog Technology, Inc.
Part No. AAT3681 AAT3681IJS-4.2-1-T1 AAT3681IJS-4.2-T1
OCR Text ...ly enhanced, space-saving 8-pin 2.0x2.1mm SC70JW package and is specified for operation over the -40C to +85C temperature range. AAT3681 ...event of operating ambient temperatures exceeding the power dissipation abilities of the device pack...
Description USB Port or AC Adapter Lithium-Ion/Polymer Battery Charger

File Size 316.47K  /  15 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3
OCR Text ... 370 MAX 5.0 4.0 25 250 100 200 2.34 0.055 0.086 40 130 75 35 200 130 5.5 28 75 0.83 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC ...Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area...
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

File Size 57.05K  /  8 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FSYA254R1 FSYA254R3
OCR Text ...21A, RL = 6.0, VGS = 12V, RGS = 2.35 4-2 FSYA254D, FSYA254R Source to Drain Diode Specifications PARAMETER Forward Voltage Reverse R...Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) APPLIED VGS BIAS (V) -20 -5 -10 -15 -20 (NO...
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

File Size 55.31K  /  8 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3
OCR Text ...e TA17667. S Packaging SMD-2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. ...Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) ION SPECIES Ni Br Br Br Br NOTES: 4. Testing ...
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET

File Size 48.34K  /  8 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYC264R4 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
OCR Text ...e TA17668. S Package SMD-2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. ...Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) ION SPECIES Ni Br Br Br Br NOTES: 4. Testing ...
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 34 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 47.77K  /  8 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYE13A0R4 FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
OCR Text ... TYP MAX 5.0 4.0 25 250 100 200 2.32 VGS = 0V to 20V VGS = 0V to 12V VGS = 0V to 2V VDD = 50V, ID = 12A ID = 12A, VDS = 15V VDS = 25V, VGS =...Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area...
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 55.19K  /  8 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSYE23A0R4 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
OCR Text ...0 50 MAX 5.0 4.0 25 250 100 200 2.77 0.33 0.538 15 30 45 20 57 38 1.9 7.4 20 3.0 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC V pF...Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area...
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 8 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 57.42K  /  8 Page

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