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Sharp Electrionic Compo... SHARP[Sharp Electrionic Components]
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| Part No. |
PT483F1 PT481 PT481F
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| OCR Text |
...ty ( IC : MIN. 1.5mA at E e = 0.1mw/cm 2 ) : PT481/PT483F1 ( IC : MIN. 0.9mA at E e = 0.1mw/cm 2 ) : PT481F 4. Visible light cut-off type : PT481F/PT483F1 5. Long lead pin type : PT483F1
Narrow Acceptance High Sensitivity Phototransistor... |
| Description |
Narrow Acceptance High Sensitivity Phototransistor
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| File Size |
66.18K /
4 Page |
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Sharp Corporation SHARP[Sharp Electrionic Components]
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| Part No. |
PT493F PT491 PT491F PT493
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| OCR Text |
...= 10V, E e = 0 IC = 0.8mA, Ee = 1mw/cm2 VCE = 2V, I C = 5mA RL = 100 MIN. 0.3 0.2 TYP. 0.6 0.4 800 860 80 70 40 MAX. 1.3 0.8 10- 6 1.0 400 350 Unit mA mA A V nm nm s
Collector current Collector dark current
PT491/PT493 PT491F/PT493F... |
| Description |
Intermediate Acceptance High Sensitivity Phototransistor
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| File Size |
65.65K /
4 Page |
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Everlight Electronic Co., Ltd. EVERLIGHT[Everlight Electronics Co., Ltd] http://
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| Part No. |
PT6721TR8 PT6721B PT67-21B PT6721C2 PT67-21C2 PT67-21L41 PT67-21TR8 PT6721L41
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| OCR Text |
.../c IE=100A Ee=0mW/c IC=2mA Ee=1mw/c VCE=5V IC=1mA RL=1000
Ee=0mW/c VCE=20V Ee=1mw/c VCE=5V -------
EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER : ECN : DTT-067-028 REV : PAGE : 1.0 4/7
Top Phototransistor
MODEL NO : PT67-21B/... |
| Description |
high speed silicon NPN epitaxial planar phototransistor in a compact surface-mountable package.
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| File Size |
162.03K /
8 Page |
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Everlight Electronic Co., Ltd. EVERLIGHT[Everlight Electronics Co., Ltd]
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| Part No. |
PT9121B PT91-21B
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| OCR Text |
...mW/c IE=100A Ee=0mW/c IC=2mA Ee=1mw/c VCE=5V IC=1mA RL=1000 Ee=0mW/c VCE=20V Ee=1mw/c VCE=5V -------
EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER : ECN : DPT-091-006 REV : PAGE : 2.1 4/7
1.9mm Round Subminiature Axial Phototransisto... |
| Description |
1.9mm Round Subminiature Axial Phototransistor 1.9毫米回合微型轴流式光电晶体管
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| File Size |
182.94K /
7 Page |
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RFMD[RF Micro Devices] RF Micro Devices, Inc.
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| Part No. |
RF2909
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| OCR Text |
...tally for stepping output power 1mw, 10mW, or 70mW output power. Or, the output level can be adjusted by an analog input from 1mw to 80mW. The quadrature mixers have differential inputs, and are internally biased; a DC blocking capacitor is... |
| Description |
3V 915MHZ SPREAD-SPECTRUM TRANSMITTER IC
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| File Size |
156.02K /
8 Page |
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ROHM[Rohm]
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| Part No. |
RLD78NZH1
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| OCR Text |
...
PO=3mW
PO=3mW 2mW I(3mW) - I(1mw)
PO=3mW
Im
//
0.2
8
25
-
- -100
0.45
11
30
-
- -
0.9
15
38
2
3 +100
mA
deg
deg
deg
deg m
//
X Y Z
PO=3mW
-
P
770 -
785 5
795 10
nm %
P... |
| Description |
AlGaAs laser diodes
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| File Size |
74.66K /
3 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M68701 68701
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| OCR Text |
...dBc -
VDD=12.5V, VGG=5V, Pin=1mw ZG=ZL=50, VDD=10-16V, Load VSWR<4:1 VDD=15.2V, Pin=1mw, PO=6W (VGG adjust), ZL=20:1
-30 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditio... |
| Description |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER / 820-851MHz / 6W / FM PORTABLE RADIO
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| File Size |
27.98K /
3 Page |
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Price and Availability
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