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Philips
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| Part No. |
PHE13005
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| OCR Text |
...erating area. Vcl 1000V; Vcc = 150v; VBE = -5V; LB = 1H; Lc = 200H
500us DC
0.1
I
III
0.01
IC (A)
9
8
0.001 1 10 100 1,000
VBE=-5V
7
VCEclamp (V)
6
Fig.15. Forward bias safe operating area. Ths 25 C (1)... |
| Description |
Silicon Diffused Power Transistor
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| File Size |
51.74K /
7 Page |
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it Online |
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NXP Semiconductors N.V. Philips
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| Part No. |
PHE13007 PHE13007127
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| OCR Text |
...ting area. Vclamp < 700V; Vcc = 150v; -Vbe = 5V,3V & 1V; LB = 1H; LC = 200H.
February 1999
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13007
MECHANICAL DATA
Dimensio... |
| Description |
Silicon Diffused Power Transistor
|
| File Size |
53.85K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7281 FN4294
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| OCR Text |
...0 + VDD BVDSS tP VDS VDD
50V-150v
0V
FIGURE 4. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 5. UNCLAMPED ENERGY WAVEFORMS
VDD
tON ...2a tH = 500ms; VH = 25V; IH = 1A MAX 0.50 6 92 190 UNITS A A mV mV
4-5
JANSR2N7281 Rad Hard Da... |
| Description |
Radiation Hardened/ N-Channel Power MOSFET Radiation Hardened, N-Channel Power MOSFET Radiation Hardened N-Channel Power MOSFET From old datasheet system
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| File Size |
49.48K /
7 Page |
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it Online |
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NXP Semiconductors N.V. Philips
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| Part No. |
PHE13009 PHE13009127
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| OCR Text |
...ting area. Vclamp < 700V; Vcc = 150v; -Vbe = 5V,3V & 1V; LB = 1H; LC = 200H
March 1999
5
Rev 1.000
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
PHE13009
MECHANICAL DATA
Dimensio... |
| Description |
Silicon Diffused Power Transistor
|
| File Size |
43.94K /
7 Page |
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MICROSEMI
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| Part No. |
2N3585
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| OCR Text |
...V VCE = 300V, VBE = -1.5V VCE = 150v, IB = 0 VEB = 6V, IC = 0 IC = 0.1A, VCE = 10V IC = 1.0A, VCE = 10V IC = 1.0A, VCE = 2V IC = 1.0A, IB = ...2a, f = 5 MHz VCE = 10V, IC = 0.2a VCB = 10V, IE = 0, f = 1.0MHz IC = 1.0A, IB2 = 0.10A IC = 1.0A, I... |
| Description |
5 Amp, 500V, High Voltage NPN Silicon Power Transistors
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| File Size |
63.02K /
3 Page |
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it Online |
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Philips
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| Part No. |
BUJ106A
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| OCR Text |
...ing area. Vclamp < 1000V; Vcc = 150v; -Vbe = 5V,3V & 1V; LB = 1H; LC = 200H
March 1999
5
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ106A
MECHANICAL DATA
Dimensions in... |
| Description |
Silicon Diffused Power Transistor
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| File Size |
43.76K /
7 Page |
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it Online |
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Price and Availability
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