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  150a Datasheet PDF File

For 150a Found Datasheets File :: 3491    Search Time::1.172ms    
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    STMicroelectronics N.V.
Part No. DIM150CHS17-E
OCR Text ... v ce(sat) (typ) 2.0v i c (max) 150a i c(pk) (max) 300a dim150 c hs17-e000 half bridge igbt module fig. 1 half bridge circuit diagram fig. 2 module outline outline type code: c (see package details for further information) 3(c1) 1(e1c2) 2(...
Description IGBT Modules - Half Bridge IGBT模块-半桥

File Size 145.74K  /  8 Page

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    SIGC158T120R3

Infineon Technologies AG
Part No. SIGC158T120R3
OCR Text ... code sigc158t120r3 1200v 150a 12.56 x 12.56 mm 2 sawn on foil q67050 - a4109 - a001 mechanical parameter: raster size 12.56 x 12.56 emitter pad size 8x(2.6 46 x 5.45 4 ) gate pad size 1.139 x 1.139 mm ...
Description IGBT3 Chip IGBT3芯片

File Size 76.98K  /  4 Page

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    Advanced Power Technology, Ltd.
Part No. APTGT150H60TG
OCR Text ...@ 550v v ces = 600v i c = 150a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? technology - lo...
Description Full - Bridge Trench Field Stop IGBT Power Module 桥戴场站IGBT功率模块

File Size 279.78K  /  5 Page

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    Advanced Power Technology, Ltd.
Part No. APTGT150a170
OCR Text ... g2 e2 v ces = 1700v i c = 150a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? technology - lo...
Description Phase leg Trench Field Stop IGBT Power Module 相脚戴场站IGBT功率模块

File Size 266.30K  /  5 Page

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    Advanced Power Technology, Ltd.
Part No. APT75GP120JDQ3
OCR Text ...0v i c = 75a t j = 25c i c = 150a i c = 75a i c = 37.5a i c = 150a i c = 75a i c = 37.5a v ge = 15v 250s pulse test <0.5 % duty cycle v ge = 10v 250s pulse test <0.5 % duty cycle 050-7458 rev a 10-2005 apt75gp120jdq3 ...
Description POWER MOS 7 IGBT IGBT的功率MOS 7

File Size 452.31K  /  9 Page

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    Microsemi, Corp.
Part No. APT75GN120J
OCR Text ...test <0.5 % duty cycle i c = 150a i c = 75a i c = 37.5a i c = 150a i c = 75a i c = 37.5a 050-7609 rev c 4-2006 apt75gn120j v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 1.0 ? l = 100 h ...
Description Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT

File Size 286.25K  /  6 Page

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    Advanced Power Electronics, Corp.
Part No. AP25G45EM
OCR Text ...50v, v ge =0v v ge =4.5v, i cp =150a (pulsed) v ce =v ge , i c =250ua i c =50a v ce =360v v ge =10v v ce =25v test conditions ap25g45em symbol v ce 450v 150a rating collector-emitter voltage units v 450 6 150 8 pulsed collector current pa...
Description N-CHANNEL INSULATED GATE 450 V, N-CHANNEL IGBT

File Size 68.44K  /  3 Page

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    SIGC223T120R2CS

Infineon Technologies AG
Part No. SIGC223T120R2CS
OCR Text ...ode sigc223t120r2cs 1200v 150a 14.4 x 15.5 mm 2 sawn on foil tbd mechanical parameter: raster size 14.4 x 15.5 emitter pad size 8x( 3.67x6.77 ) gate pad size 1.49 x 1.51 area total / active 223.5 / 189...
Description IGBT Chip in NPT-technology 在不扩散核武器条约IGBT芯片技

File Size 64.81K  /  4 Page

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