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IXYS[IXYS Corporation]
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| Part No. |
IXDN55N120D1 IXDN55N120
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| OCR Text |
...l connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Advantages
q q q
Space savings Easy to mount with 2 screws High power density
Symbol
Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) ... |
| Description |
IGBT Discretes: npt IGBT High Voltage IGBT with optional Diode
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| File Size |
71.53K /
4 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N12
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| OCR Text |
... 12V 10 20
10
100
5 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V)
50 16
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
50 TC... |
| Description |
43A, 1200V, npt Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ npt Series N-Channel IGBT 43A 1200V npt Series N-Channel IGBT
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| File Size |
135.28K /
7 Page |
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it Online |
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ETC Semikron International
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| Part No. |
SKM200GB124D SKM200GB124
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| OCR Text |
...00V 800V Cies 10
M200G124.X LS-13
Rthjc = 0,005 ICpuls = 150 A
100 nF
M200G124.X LS -14
VGE = 0 V f = 1 MHz
Fig. 13 Typ. gat...5 0,2 0,1 0,05 0,02 0,01
0,0001
0,001
0,01
0,1 s
1
0,0001
0,001
0,01
0,1 ... |
| Description |
Low Loss IGBT Modules
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| File Size |
127.01K /
6 Page |
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it Online |
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Price and Availability
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