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10v ms Datasheet PDF File

For 10v ms Found Datasheets File :: 17036 Search Time::2.5ms
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				Analog Power
Part No.	AM7382N
OCR Text	... 80 r ds(on) (m) 25 @ v gs = 10v 28 @ v gs = 4.5v gate-source voltage power dissipation a t <= 10 sec steady state r ja i d a p d w key...ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 20 40 60 80 100 120 140 160 180...
Description	N-Channel 80-V (D-S) MOSFET
File Size	334.57K / 5 Page	View it Online	Download Datasheet

				MagnaChip Semiconductor...
Part No.	MDV1548 MDV1548URH
OCR Text	... ? i d = 28 a @v gs = 10v ? r ds(on) < 18.8 m @v gs = 10v < 27.8 m @v gs = 4.5 v ? 100% uil tes...ms 10 s 1 s 100 ms dc 10 ms operation in this area is limited by r ds(on) single pulse t j =max ...
Description	Single N-channel Trench MOSFET 30V
File Size	1,043.94K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SJ364
OCR Text	...Yfs \| RDS(on) Conditions VDS = -10v, VGS = 0 VGS = 30V, VDS = 0 IG = 10A, VDS = 0 VDS = -10v, ID = -10A VDS = -10v, ID = -1mA, f = 1kHz VDS ...ms pF pF Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crs...
Description	Silicon P-Channel Junction FET
File Size	30.25K / 2 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	MCH6653 ENA1239
OCR Text	...60V, VGS=0V VGS=8V, VDS=0V VDS=-10v, ID=--100A VDS=-10v, ID=--50mA ID=-50mA, VGS=-4V ID=-30mA, VGS=-2.5V ID=-10mA, VGS=-1.5V --0.4 130 220 6...ms Marking : XE Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. product...
Description	P-Channel Silicon MOSFET General-Purpose Switching Device Applications
File Size	50.95K / 4 Page	View it Online	Download Datasheet

				MagnaChip Semiconductor...
Part No.	MDV1545SURH
OCR Text	... ? i d = 32 a @v gs = 10v ? r ds(on) < 10.7 m @v gs = 10v < 13.0 m @v gs = 4.5 v ? 100% uil tes...ms 10 s 1 s 100 ms dc 10 ms operation in this area is limited by r ds(on) single pulse t j =max ...
Description	Single N-channel Trench MOSFET 30V
File Size	1,005.96K / 6 Page	View it Online	Download Datasheet

				MagnaChip Semiconductor...
Part No.	MDV1542 MDV1542URH
OCR Text	... ? i d = 32 a @v gs = 10v ? r ds(on) < 4.9 m @v gs = 10v < 6.8 m @v gs = 4.5 v ? 100% uil teste...ms 10 s 1 s 100 ms dc 10 ms operation in this area is limited by r ds(on) single pulse t j =max ...
Description	Single N-channel Trench MOSFET 30V
File Size	1,030.87K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDP100N1012
OCR Text	...(on) = 8.2m ( typ.)@ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely...ms dc 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited...
Description	N-Channel PowerTrench? MOSFET 100V, 75A, 10mΩ
File Size	369.32K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS3118D
OCR Text	...ut current VIN < -0.2V or VIN > 10v Operating temperature Storage temperature Power dissipation T C = 85 C 6cm 2 cooling area , T A = 85 C U...ms, RI = 2 , 2 kV E 40/150/56 3 115 55 Page 2 -0.2V VIN 10v \| II...
Description	Smart Lowside Power Switch Smart Low Side Switches - 42V, 100mΩ, 2.4A, TO252
File Size	215.36K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	PSMN1R1-40BS
OCR Text	... drain current t mb =25c; v gs =10v; see figure 1 [1] --120a p tot total power dissipation t mb = 25 c; see figure 2 --306w t j junction ...ms t p =10 ? s 100 ms 1 ms psmn1r1-40bs all information provided in this document is subject to ...
Description	N-channel 40 V 1.4 m standard level MOSFET in D2PAK
File Size	201.54K / 15 Page	View it Online	Download Datasheet

For 10v ms Found Datasheets File :: 17036 Search Time::2.5ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |