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http://
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| Part No. |
AP4511GD
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| OCR Text |
...tinuous drain current 3 7 -6.1 a i d @t a =70 continuous drain current 3 5.7 -5 a i dm pulsed drain current 1 30 -30 a p d @t a =25 ...0v, i d =250ua 35 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 2... |
| Description |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
152.83K /
8 Page |
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Guangdong Kexin Industrial ...
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| Part No. |
SI2302DS-HF KI2302DS-HF
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| OCR Text |
1 m o s f e t feat ur es v d s = 20v r d s ( on) = 85m @v g s = 4.5v ,i d = 3.6a r d s ( on) = 115m @v g s = 2.5v ,i d = 3....0v 20 v v d s = 20v , v g s = 0v 1 v d s = 20v , v g s = 0v ,t j = 55 10 g ate- b ody leak ... |
| Description |
N-Channel MOSFET
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| File Size |
964.70K /
4 Page |
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MPS
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| Part No. |
MPGC01-C123
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| OCR Text |
.... 0.9 www.monolithicpower.com 1 1/16/2008 mps proprietary information. unaut horized photocopy and duplication prohibited. ? 2008 mp...0v, v sw = 0v 0 50 a current limit (4) 7.5 a oscillator frequency f sw v fb = 0.6v ... |
| Description |
600KHz Step-Down Converter
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| File Size |
474.16K /
10 Page |
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Shenzhen Jin Yu Semiconductor Co., Ltd.
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| Part No. |
FDN338P
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| OCR Text |
1.6a= ? features advanced trench process technology high density cell design for ultra low on-resistance package di...0v, i d = -250ua -20 v drain-source on-state resistance r ds(on) v gs = -4.5v, i d = ... |
| Description |
20 V P-Channel Enhancement Mode MOSFET
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| File Size |
1,906.49K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRLL110 IRLL110TR
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| OCR Text |
...V RDS(on) = 0.54
G S
ID = 1.5A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the bes...0V, ID = 250A --- 0.12 --- V/C Reference to 25C, ID = 1mA --- --- 0.54 VGS = 5.0V, ID = 0.90A --- -... |
| Description |
1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
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| File Size |
213.54K /
8 Page |
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it Online |
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Price and Availability
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