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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2L-11 SPB80N06S2L-11
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| OCR Text |
...JC RthJA RthJA -
Values typ. 0.63 max. 0.95 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specifi...58A VGS =0V, VDS =25V, f=1MHz
38 -
S
2650 pF 620 200 13 29 68 27 ns
VDD =30V, VGS =10V, ... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 11 mOhm
OptiMOS Power-Transistor
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| File Size |
310.85K /
8 Page |
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it Online |
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Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUR50N025-05P-T4-E3 SUR50N025-05P SUR50N025-05P-E3
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| OCR Text |
... (A)a, e
89 80
rDS(on) (W)
0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V
Qg (Typ)
30 nC
D TrenchFETr Power MOSFET D 100% Rg Tested D ...58a 11.5b, c 8.0b, c -55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Para... |
| Description |
N-Channel 25-V (D-S) MOSFET N沟道25V（D-S）MOSFET
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| File Size |
93.06K /
6 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
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| Part No. |
APT30GT60KR
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| OCR Text |
... Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Symbol BVCES RBVCES VGE(TH) VCE(ON)
Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55C) Collector-Emitter Reverse Breakdo... |
| Description |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 58A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
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| File Size |
25.28K /
2 Page |
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it Online |
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Price and Availability
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