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SANYO
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| Part No. |
2SK3831
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| OCR Text |
...ltage v (br)dss i d =1ma, v gs =0 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0 1 m a gate-to-source leakage current i gss v...340a i d =85a <10 m s operation in this area is limited by r ds (on).
2sk3831 no.8028-4/4 specific... |
| Description |
High Output MOSFETs
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| File Size |
41.02K /
4 Page |
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it Online |
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Kersemi Electronic Co., Ltd...
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| Part No. |
IRFR3411PBF
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| OCR Text |
...on 130 w linear derating factor 0.83 w/c v gs gate-to-source voltage 20 v i ar avalanche current 16 a e ar repetitive avalanche energy ...340a/s, v dd v (br)dss , t j 175c. pulse width 400s; duty cycle 2%. ... |
| Description |
Advanced Process Technology Ultra Low On-Resistance
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| File Size |
3,835.25K /
10 Page |
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it Online |
Download Datasheet
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Kersemi Electronic Co., Ltd...
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| Part No. |
IRFR3411PBF
|
| OCR Text |
...on 130 w linear derating factor 0.83 w/c v gs gate-to-source voltage 20 v i ar avalanche current 16 a e ar repetitive avalanche energy ...340a/s, v dd v (br)dss , t j 175c. pulse width 400s; duty cycle 2%. ... |
| Description |
HEXFET Power MOSFET
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| File Size |
3,657.46K /
10 Page |
View
it Online |
Download Datasheet
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