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Renesas
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| Part No. |
2SC4264
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| OCR Text |
... -- -- -- -- -- -- -- -- Max -- 0.5 10 1.0 0.7 -- 1.5 -- pF GHz Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 11 V, RBE = VEB = 3 V, IC = 0 I C = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1M... |
| Description |
Transistors>Amplifiers/Bipolar
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| File Size |
45.69K /
8 Page |
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it Online |
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Sanken
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| Part No. |
2SC4886
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| OCR Text |
...ternal Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
Unit
A
V
23.00.3 9.50.2
A
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 1... |
| Description |
Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)
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| File Size |
29.04K /
2 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
2SC5738
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| OCR Text |
...t gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf = 90 ns (typ.)
Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-em... |
| Description |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications
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| File Size |
115.28K /
6 Page |
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it Online |
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SANYO
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| Part No. |
2SC5966
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| OCR Text |
...
unit : mm 2174A
[2SC5966]
16.0
5.0
High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process.
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
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| Description |
Horizontal Deflection Switching Transistors
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| File Size |
36.73K /
5 Page |
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it Online |
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Sanyo
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| Part No. |
2SK2379 1036
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| OCR Text |
...
unit : mm 2063A
[2SK2379]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micalless package facilitaing mounting.
4.5 2.8
18.1
16.0
14.0
1.6 1.2 0.75
5.6
2.4 0.7
2.55
123 2... |
| Description |
N-Channel Silicon MOSFET From old datasheet system
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| File Size |
26.52K /
4 Page |
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it Online |
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Price and Availability
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