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EL1526IL 05EVAL 2SC334 MA3F752A D1FJ4 S3C72M5 9767AST 74C32N
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  0.0066 Datasheet PDF File

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    NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SA1649 2SA1649-Z 2SA1649-ZM 2SA1649-ZL 2SA1649-ZK 2SA1649-M
OCR Text ...saturation voltage: VCE(sat) = -0.3 V MAX. (@IC = -3 A) * Fast switching speed: tf = 0.3 s MAX. (@IC = -3 A) * High DC current amplifiers and excellent linearity ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base voltage C...
Description 10 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-252 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 10A条一(c)|52
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

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    2SB647A 2SB647

Renesas Electronics Corporation
Part No. 2SB647A 2SB647
OCR Text ...j Tstg 2SB647 -120 -80 -5 -1 -2 0.9 150 -55 to +150 2SB647A -120 -100 -5 -1 -2 0.9 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics (Ta = 25C) 2SB647 Item Collector to base breakdown voltage Collector to emitter breakdown...
Description SILICON PNP EPITAXIAL

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    2SB649 2SB649A

TRANSYS Electronics Limited
Part No. 2SB649 2SB649A
OCR Text ...P MAX UNIT V V V Ic=-1mA, IE=0 Ic=-10mA, IB=0 2SB649 2SB649A IE=-1mA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC=-150mA 2SB649 2SB649A VCE=-5V, IC=-500mA IC=-500mA, IB=-50mA VCE=-5V, IC=-150mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MH...
Description TO-126C Plastic-Encapsulated Transistors 26C塑料封装晶体

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    Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC3130
OCR Text 0.3 +0.2 s Features q q 0.650.15 +0.25 1.5 -0.05 0.650.15 0.95 q High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. Mini type package, allowing dow...
Description Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

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    SANYO
Part No. 2SC3149
OCR Text ...ions Ratings 900 800 7 1.5 5 0.8 40 150 -55 to +150 Unit V V V A A A W C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance...
Description NPN Triple Diffused Planar Silicon Transistor 800V/1.5A Switching Regulator Applications

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    NEC Corp.
NEC, Corp.
Part No. 2SC3583 2SC3583R 2SC3583S 2SC3583R35 2SC3583R34 2SC3583-L
OCR Text ...MENSIONS (Units: mm) 2.80.2 0.4 -0.05 +0.1 1.5 0.65 -0.15 +0.1 0.95 0.95 FEATURES * NF * Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 2.90.2 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Vo...
Description For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits 晶体
BJT 双极型晶体管

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    SANYO
Part No. 2SC3912 2SA1518
OCR Text ...e current capacity : IC=500mA. 0.5 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.5 1.5 2.5 ( ) : 2SA1518 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-E...
Description NPN Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance)
PNP Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance)

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    NEC, Corp.
Part No. 2SC4185 2SC4185U22
OCR Text ...cuit and other applications. 2.0 0.2 0.3 +0.1 -0 0.65 0.65 2 PACKAGE DIMENSIONS in millimeters 2.1 0.1 1.25 0.1 FEATURES * Low Noise * High Conversion Gain * Easy & economical mounting realizable with plastic mold package for ...
Description TRANSISTOR | BJT | NPN | 14V V(BR)CEO | 50MA I(C) | SOT-323 晶体管|晶体管|叩| 14V的五(巴西)总裁| 50mA的一(c)|的SOT - 323
UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

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    2SC4422

Hitachi Semiconductor
Part No. 2SC4422
OCR Text ... NF Min 15 -- -- -- 50 -- 4.5 7.0 -- Typ -- -- -- -- -- 1.2 6.0 9.0 1.6 Max -- 1 1 1 250 1.6 -- -- 3.0 pF GHz dB dB Unit V A A A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 10 V, RBE = VEB = 1 V, IC = 0 VCE = 5 V, IC = 20 m...
Description SILICON NPN EPITAXIAL

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    SANYO
Part No. 2SC4426
OCR Text ...y. * Fast switching speed (tf : 0.1s typ). * Wide ASO. * Adoption of MBIT process. * Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039D [2SC4426] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20...
Description NPN Triple Diffused Planar Silicon Transistor 800V/3A Switching Regulator Applications

File Size 110.23K  /  5 Page

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