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  .5-8ghz Datasheet PDF File

For .5-8ghz Found Datasheets File :: 967    Search Time::4.922ms    
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    HMC590

Hittite Microwave Corporation
Part No. HMC590
OCR Text ...ie provides 24 db of gain, +31.5 dbm of saturated power at 25% pae from a +7.0v supply. the rf i/os are dc blocked and matched to 50 ohms...8ghz 9ghz 10ghz im3 (dbc) pin/tone (dbm) 0 5 10 15 20 25 30 35 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 ...
Description high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi

File Size 409.79K  /  8 Page

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    SA8025A SA8025ADK

PHILIPS[Philips Semiconductors]
Part No. SA8025A SA8025ADK
OCR Text ...division with selectable modulo 5 or 8 implemented in the Main synthesizer to allow the phase detector comparison frequency to be five or ei...8GHz at 3V. Programming and channel selection are realized by a high speed 3-wire serial interface. ...
Description Low-voltage 1.8GHz fractional-N synthesizer

File Size 456.88K  /  23 Page

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    Avago Technologies
Part No. MGA-25203
OCR Text ...eless data applications in the 5.1 to 5.9 ghz frequency ranges. the pa is optimized for ieee 802.11a/n wlan and 802.16 wimax applications....8ghz 5.9ghz -30c 25c +85c 5.4ghz 5.5ghz 5.6ghz 5.7ghz 5.8ghz 5.9ghz 5.4ghz 5.5ghz 5.6ghz 5.7ghz 5.8g...
Description 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier

File Size 212.73K  /  14 Page

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    CHA7114-99F CHA7114-99F00 CHA711410 CHA7114-15

United Monolithic Semiconductors
United Monolithic Semic...
Part No. CHA7114-99F CHA7114-99F00 CHA711410 CHA7114-15
OCR Text ...p operating frequency range 8.5 11.5 ghz p_4dbcp output power @ 4dbcp @ 25c 8 w g small signal gain @ 25c 20 db e...8ghz 8.4ghz 8.8ghz 9.2ghz 9.6ghz 10ghz 10.4ghz 10.8ghz 11.2ghz 11.6ghz 12ghz output power @ 25c ve...
Description X Band High Power Amplifier

File Size 174.69K  /  8 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280W Q62702-F1504
OCR Text ...urrent gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-12-1996 BFP 280W Electrical Characteristics at TA = 25C, unless...8GHz VCE = Parameter 17 dB 15 10V G 18 G 14 13 16 1V 14 0.7V 12 8 10 7 6 8 0 2 4 6 8 mA IC ...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

File Size 59.70K  /  7 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280 Q62702-F1378
OCR Text ...urrent gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFP 280 Electrical Characteristics at TA = 25C, unless ...8GHz VCE = Parameter 18 dB 10V 3V G 18 G 14 2V 16 1V 14 0.7V 12 8 0.7V 10 6 10 1V 12 ...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管(对于低噪音,在移动通信系统的低功耗放大器
NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems)
From old datasheet system

File Size 60.12K  /  7 Page

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    CHA7012-99F CHA7012-99F00 CHA701209 CHA7012-15

United Monolithic Semiconductors
United Monolithic Semic...
Part No. CHA7012-99F CHA7012-99F00 CHA701209 CHA7012-15
OCR Text ...asing circuit chip size : 5.00 x 3.68 x 0.1mm main characteristics vc=7.5v, ic (quiescent) = 1.9a, pulse wid...8ghz 10ghz 10.2ghz 10.4ghz output power @ 25c versus compression and frequenc y 0 5 10 15 20 25...
Description X-band HBT High Power Amplifier

File Size 388.70K  /  10 Page

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    BFP640

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BFP640
OCR Text ...ector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 30 mA, VCE = 3 V, pulse mea...8GHz 2.4GHz 3GHz 30 25 20 15 10 0 Gms 14 5GHz |S21| Gma 12 10 0 6GHz 10 ...
Description    NPN Silicon Germanium RF Transistor

File Size 270.21K  /  8 Page

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    BFR340F

INFINEON[Infineon Technologies AG]
Part No. BFR340F
OCR Text ...ector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 3 V hFE 60 130 200...8GHz 20 dBm 12 12 3V IP 3 fT 8 10 2V 4 0 6V 4V 3V 2V 1V 8 1V 6...
Description RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators

File Size 150.45K  /  8 Page

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    FLU17ZM

Fujitsu Microelectronics
Fujitsu Component Limited.
Part No. FLU17ZM
OCR Text ... VDS VGS PT Tstg Tch Rating 15 -5 8.3 -55 to +150 150 Unit V V W Recommended Operating Condition (Case Temperature Tc=25) Item DC Inpu...8GHz 2.2GHz) 15 10 Small Signal R.L. & Isolation [dB] 5 0 -5 -10 -15 -20 -25 -30 -35 1.4 1.6 1.8 2 ...
Description From old datasheet system
L-Band Medium & High Power GaAs FET

File Size 229.77K  /  8 Page

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