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SavantIC
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| Part No. |
BUH315
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| OCR Text |
...uration voltage i c =3a ;i b =0.75a 1.5 v v besat base-emitter saturation voltage i c =3a ;i b =0.75a 1.3 v i ces collector cut-off current v ce =1500v ; v be =0 0.2 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1... |
| Description |
SILICON POWER TRANSISTOR
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| File Size |
174.57K /
3 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
BUK954R2-55B NXPSEMICONDUCTORS-BUK954R2-55B127
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| OCR Text |
... figure 1 ; see figure 3 [1] --75a p tot total power dissipation t mb = 25 c; see figure 2 --300w static characteristics r dson drain-source on-state resistance v gs =5v; i d =25a; t j =25c; see figure 11 ; see figure 12 -3.54.2m ? ... |
| Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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| File Size |
175.40K /
14 Page |
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it Online |
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Advanced Power Technology, Ltd.
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| Part No. |
APT75GP120JDQ3
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| OCR Text |
... voltage (v ge = 15v, i c = 75a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 75a, t j = 125c) collector cut-o ff current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v g... |
| Description |
POWER MOS 7 IGBT IGBT的功率MOS 7
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| File Size |
452.31K /
9 Page |
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it Online |
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Price and Availability
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