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    CYRS1542AV18 CYRS1544AV18

Cypress Semiconductor
Part No. CYRS1542AV18 CYRS1544AV18
OCR Text word burst architecture with radstop? technology cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number: 001-60006 rev. *i revised january 4, 2013 72-mbit qdr ? ii+ sram two-word ...
Description 72-Mbit QDR II SRAM Two-word Burst Architecture

File Size 422.24K  /  33 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. CY24C08-SXIT CY24C16-SXI CY24C02-ZXI
OCR Text ...h, the 1k requires a 7-bit data word address for random word addressing. cy24c02 internally organized with 16 pages of 16-bytes each, the 2k requires a 8-bit data word address for random word addressing. cy24c04 internally organized with 3...
Description 8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
16K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

File Size 487.38K  /  16 Page

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    FUJITSU LTD
Part No. MBM29DL32BF70TN MBM29DL32BF70PBT
OCR Text .../words are programmed one byte/ word at a time using the eprom programming mechanism of hot electron injection. *1: flexbank tm is a trademark of fujitsu limited. *2: embedded erase tm and embedded program tm are trademarks of advanced m...
Description 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
2M X 16 FLASH 3V PROM, 70 ns, PBGA48

File Size 307.18K  /  70 Page

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    FUJITSU LTD
Part No. MBM29DL320BF70TR
OCR Text ...s/words are programmed one byte/word at a time using the eprom programming mechanism of hot electron injection. *1: flexbank tm is a trademark of fujitsu limited. *2: embedded erase tm and embedded program tm are trademarks of advanced m...
Description 2M X 16 FLASH 3V PROM, 70 ns, PDSO48

File Size 346.89K  /  71 Page

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Part No. K8F5715ETM-SC1C0 K8F5715ETM-DE1F0 K8F5715ETM-FC1E0 K8F5715ETM-SC1E0 K8F5615ETM-FC1D0 K8F5615ETM-DE1D0 K8F5615ETM-DE1C0 K8F5615ETM-FC1C0 K8F5615ETM-FC1F0
OCR Text ... operation in units of 16 bits (word) and erases in units of a block. single or multiple blocks can be erased. the block erase operation is completed with in typically 0.6sec. the device requires 25ma as program/erase current in the extende...
Description 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44
16M X 16 FLASH 1.8V PROM, 100 ns, PBGA88

File Size 1,059.43K  /  59 Page

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    HT6P237A HT6P247A

Holtek Semiconductor Inc
Holtek Semiconductor In...
Part No. HT6P237A HT6P247A
OCR Text ...0, b1 < 1 pilot code > 1 code word 1 code word 1pilot code<active<1 code word dout transmission timing diagram code bits a code bit is the basic component of the encoded waveform, and can be classifed as either an a...
Description Learning RF Encoder

File Size 901.18K  /  10 Page

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    MACRONIX INTERNATIONAL CO LTD
Part No. MX29F800CBTI-90G
OCR Text ...access time: 70/90ns - byte/word program time: 9us/11us (typical) - erase time: 0.7s/sector, 8s/chip (typical) ? low power consumption - low active read current: 40ma (maximum) at 5mhz - low standby current: 1ua (typical)...
Description 512K X 16 FLASH 5V PROM, 90 ns, PDSO48

File Size 2,022.62K  /  48 Page

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    MACRONIX INTERNATIONAL CO LTD
Part No. MX29SL402CBXBI-90G MX29SL402CBTI-90G
OCR Text ...ance - access time: 90ns - byte/word program time: 12us/18us (typical) - erase time: 1.3s/sector, 9s/chip (typical)  low power consumption - low active read current: 6ma (maximum) at 5mhz - low standby current: 1ua (typical)  typical 100,...
Description 256K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
256K X 16 FLASH 1.8V PROM, 90 ns, PDSO48

File Size 1,331.62K  /  59 Page

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    MACRONIX INTERNATIONAL CO LTD
Part No. MX29F800CBMI-70G
OCR Text ... access time: 70ns - byte/word program time: 9us/11us (typical) - erase time: 0.7s/sector, 8s/chip (typical) ? low power consumption - low active read current: 40ma (maximum) at 5mhz - low standby current: 1ua (typical)...
Description 512K X 16 FLASH 5V PROM, 70 ns, PDSO44

File Size 1,958.73K  /  48 Page

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