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vdgr Datasheet PDF File

For vdgr Found Datasheets File :: 5151 Search Time::1.047ms
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				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
OCR Text	...case for 10 seconds Symbol VDSS vdgr VGS VGSM ID ID IDM PD Value 250 250 20 40 5.0 3.2 15 50 0.4 1.75 - 55 to 150 84 2.50 100 71.4 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C Watts C mJ C/W TJ, Tstg EAS RJC RJA RJA TL C Designer's...
Description	TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM From old datasheet system
File Size	252.63K / 10 Page	View it Online	Download Datasheet

				MOTOROLA INC Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTD5P06E
OCR Text	...13, Style 2 DPAK Symbol VDSS vdgr VGS VGSM ID ID IDM PD Value 60 60 20 30 5.0 3.8 15 40 0.32 1.75 - 55 to 150 125 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C Watts C mJ TJ, Tstg EAS RJC RJA RJA TL 3.13 100 71.4 260 C/W C ...
Description	TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM
File Size	207.75K / 10 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTD5P06V ON2511 MTD5P06V-T4
OCR Text	...mended pad size. Symbol VDSS vdgr VGS VGSM ID ID IDM PD Value 60 60 15 25 5 4 18 40 0.27 2.1 - 55 to 175 125 3.75 100 71.4 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C Watts C mJ C/W TJ, Tstg EAS RJC RJA RJA TL C Designer'...
Description	5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM From old datasheet system
File Size	244.68K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTE125N20E MTE125N20E_D ON2529
OCR Text	..., File #E69369 G S Symbol VDSS vdgr VGS ID ID IDM PD TJ, Tstg EAS MTE125N20E Motorola Preferred Device TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM (R) 4 1 2 3 D SOT-227B 1. 2. 3. 4. Source Gate Drain Source 2 M...
Description	From old datasheet system TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM
File Size	227.99K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. Motorola, Inc ON Semi
Part No.	MTY55N20E MTY55N20E_D ON2720
OCR Text	...8 OHM (R) G S Symbol VDSS vdgr VGS VGSM ID IDM PD TJ, Tstg EAS RJC RJA TL CASE 340G-02, STYLE 1 TO-264 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M) Gate-Source Vol...
Description	TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
File Size	231.14K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHD12N10E
OCR Text	...mum System (IEC 134) SYMBOL VDS vdgr VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage tem...
Description	PowerMOS transistor
File Size	78.59K / 7 Page	View it Online	Download Datasheet

				http:// PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3
OCR Text	...(IEC 134) SYMBOL PARAMETER VDSS vdgr VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITI...
Description	N-channel TrenchMOS transistor 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	110.51K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHD44N06LT PHP44N06LT PHB44N06LT
OCR Text	...(IEC 134) SYMBOL PARAMETER VDSS vdgr VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITI...
Description	TrenchMOS transistor Logic level FET 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	80.20K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHD66NQ03LT PHP66NQ03LT PHB66NQ03LT
OCR Text	...EC 60134). Symbol Parameter VDS vdgr VGS VGSM ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) peak gate-source voltage drain current (DC) tp 50 s; pulsed; duty cycle 25%; Tj 150 C Tmb = 25 C; VGS = 5 V; Figur...
Description	Turret Lug, for 1.6mm panel thickness 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel TrenchMOS transistor
File Size	112.35K / 14 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	RFK25N20 RFK25N18
OCR Text	.... . . . . . . . . . . . . . . . vdgr Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description	25A/ 180V and 200V/ 0.150 Ohm/ N-Channel Power MOSFETs 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs 25A 180V and 200V 0.150 Ohm N-Channel Power MOSFETs
File Size	42.17K / 5 Page	View it Online	Download Datasheet

For vdgr Found Datasheets File :: 5151 Search Time::1.047ms
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