ultra high frequency tcvcxo pdf Datasheet P8 Description --- IC-ON-LINE


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ultra high frequency tcvcxo Datasheet PDF File

For ultra high frequency tcvcxo Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Sanyo Semicon Device
Part No.	15GN01MA
Description	VHF to UHF Band high-frequency Switching, high-frequency General-Purpose Amplifier Applications
File Size	45.35K / 5 Page	View it Online	Download Datasheet

				Exar, Corp. EXAR[Exar Corporation]
Part No.	ST49C101A ST49C101ACF8-01 ST49C101ACF8-03 ST49C101ACF8-05 ST49C101ACF8-06 ST49C101ACF8-07 ST49C101ACF8-08 ST49C101ACF8-09 ST49C101ACF8-10 ST49C101ACF8-13 ST49C101ACF8-15 ST49C101A-XX
Description	high frequency Clock Multiplier 80 MHz, OTHER CLOCK GENERATOR, PDSO8 high frequency Clock Multiplier(高频时钟乘法器（掩摸可编程单片模拟锁相环设备 Preprogrammed high Speed frequency Multiplier
File Size	89.72K / 10 Page	View it Online	Download Datasheet

				Kyocera, Corp. Advanced Analogic Technologies, Inc. KSS[Kyocera Kinseki Corpotation] American KSS
Part No.	TCXO-204C2 VC-TCXO-204C2 VC-TCXO-204C2-16.8MHZ-OUT1-STBY1 VC-TCXO-204C2-14.4MHZ-OUT1-STBY1 VC-TCXO-204C2-12.8MHZ-OUT1-STBY2 VC-TCXO-204C2-19.2MHZ-OUT1-STBY1
Description	TCXO, VC-TCXO 温补VC - TCXO tcvcxo, SINE OUTPUT, 19.2 MHz tcvcxo, SINE OUTPUT, 12.8 MHz tcvcxo, SINE OUTPUT, 14.4 MHz tcvcxo, SINE OUTPUT, 16.8 MHz TCXO/ VC-TCXO VC-TCXO for Personal Cellular Phone.
File Size	127.04K / 1 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	15GN01FA
Description	NPN Epitaxial Planar Silicon Transistor VHF to UHF Band high-frequency Switching, high-frequency General-Purpose Amplifier Applications
File Size	45.57K / 5 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	15GN01SA
Description	NPN Epitaxial Planar Silicon Transistor VHF to UHF Band high-frequency Switching, high-frequency General-Purpose Amplifier Applications
File Size	45.56K / 5 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	15GN01NA
Description	NPN Epitaxial Planar Silicon Transistor VHF to UHF Band high-frequency Switching, high-frequency General-Purpose Amplifier Applications
File Size	45.48K / 5 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	15GN01CA
Description	NPN Epitaxial Planar Silicon Transistor VHF to UHF Band high-frequency Switching, high-frequency General-Purpose Amplifier Applications
File Size	44.99K / 5 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	2SC2670
Description	Transistor Silicon NPN Epitaxial Type (PCT process) high frequency Amplifier Applications AM high frequency Amplifier Applications AM frequency Converter Applications
File Size	216.38K / 5 Page	View it Online	Download Datasheet

				Vectron International, Inc.
Part No.	FX-102
Description	frequency Translator55.52 MHz Output Locked to Input frequency 8kHz Clock,ultra Low Jitter PECL Output频率变换器（155.52MHz时钟输出kHz输入时钟,超低Jitter PECL
File Size	576.05K / 7 Page	View it Online	Download Datasheet

				CREE POWER
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

For ultra high frequency tcvcxo Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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