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TOSHIBA
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| Part No. |
TK100A08N1
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| OCR Text |
...) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1.0 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal...220sis
2014-01-28 rev.3.0 tk100a08n1 2 5. 5. 5. 5. thermal characteristics thermal characteri... |
| Description |
Power MOSFET (N-ch single 60V<VDSS≤150V)
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| File Size |
234.38K /
9 Page |
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it Online |
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TOSHIBA
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| Part No. |
TK31A60W
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| OCR Text |
...n) = 0.073 ? (typ.) by used to super junction structure : dtmos (2) easy to control gate switching (3) enhancement mode: v th = 2.7 to ...220sis
2013-12-26 rev.2.0 tk31a60w 2 5. 5. 5. 5. thermal characteristics thermal characterist... |
| Description |
Power MOSFET (N-ch 500V<VDSS≤700V)
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| File Size |
252.11K /
10 Page |
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it Online |
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Toshiba, Corp.
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| Part No. |
TK80A04K3L
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| OCR Text |
...) enhancement mode: v th = 2.0 to 3.0 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal c...220sis
2013-12-24 rev.2.0 tk80a04k3l 2 5. 5. 5. 5. thermal characteristics thermal characteri... |
| Description |
Power MOSFET (N-ch single 30V<VDSS??0V)
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| File Size |
232.62K /
9 Page |
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it Online |
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TOSHIBA
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| Part No. |
TTD1409B
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| OCR Text |
...g 600 400 5 6 10 1 2 25 150 -55 to 150 unit v a w note: using continuously under heavy loads (e.g. the application of high temper...220sis
2013-11-26 rev.3.0 ttd1409b 2 5. 5. 5. 5. electrical characteristics electrical charac... |
| Description |
Power transistor for high-speed switching applications
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| File Size |
172.81K /
6 Page |
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it Online |
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TOSHIBA
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| Part No. |
TK9A20DA
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| OCR Text |
...) enhancement mode: v th = 1.5 to 3.5 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal c...220sis
2014-01-06 rev.2.0 tk9a20da 2 5. 5. 5. 5. thermal characteristics thermal characterist... |
| Description |
Power MOSFET (N-ch 150V<VDSS≤250V)
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| File Size |
264.36K /
9 Page |
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it Online |
Download Datasheet
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