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  to-220sis Datasheet PDF File

For to-220sis Found Datasheets File :: 90    Search Time::2.735ms    
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    TOSHIBA
Part No. TK100A08N1
OCR Text ...) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1.0 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal...220sis 2014-01-28 rev.3.0 tk100a08n1 2 5. 5. 5. 5. thermal characteristics thermal characteri...
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 234.38K  /  9 Page

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    TOSHIBA
Part No. TK31A60W
OCR Text ...n) = 0.073 ? (typ.) by used to super junction structure : dtmos (2) easy to control gate switching (3) enhancement mode: v th = 2.7 to ...220sis 2013-12-26 rev.2.0 tk31a60w 2 5. 5. 5. 5. thermal characteristics thermal characterist...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 252.11K  /  10 Page

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    Toshiba, Corp.
Part No. TK80A04K3L
OCR Text ...) enhancement mode: v th = 2.0 to 3.0 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal c...220sis 2013-12-24 rev.2.0 tk80a04k3l 2 5. 5. 5. 5. thermal characteristics thermal characteri...
Description Power MOSFET (N-ch single 30V<VDSS??0V)

File Size 232.62K  /  9 Page

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    TK11A65W

Toshiba Semiconductor
Part No. TK11A65W
OCR Text ...on) = 0.33 ? (typ.) by used to super junction structure : dtmos (2) easy to control gate switching (3) enhancement mode: v th = 2.5 to ...220sis 2013-07-26 rev.1.0 tk11a65w 2 4. 4. 4. 4. absolute maximum ratings (note) (t absolute ...
Description MOSFETs

File Size 239.04K  /  10 Page

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    TOSHIBA
Part No. TTD1409B
OCR Text ...g 600 400 5 6 10 1 2 25 150 -55 to 150 unit v a w note: using continuously under heavy loads (e.g. the application of high temper...220sis 2013-11-26 rev.3.0 ttd1409b 2 5. 5. 5. 5. electrical characteristics electrical charac...
Description Power transistor for high-speed switching applications

File Size 172.81K  /  6 Page

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    TK80A04K3L

Toshiba Semiconductor
Part No. TK80A04K3L
OCR Text ...) enhancement mode: v th = 2.0 to 3.0 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal c...220sis 2012-12-05 rev.1.0 tk80a04k3l 2 5. 5. 5. 5. thermal characteristics thermal characteri...
Description MOSFETs

File Size 232.21K  /  9 Page

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    TK12A50E

Toshiba Semiconductor
Part No. TK12A50E
OCR Text ...) enhancement mode: v th = 2.5 to 4.0 v (v ds = 10 v, i d = 1.2 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal...220sis 2013-02-13 rev.2.0 tk12a50e 2 4. 4. 4. 4. absolute maximum ratings (note) (t absolute ...
Description MOSFETs

File Size 231.58K  /  9 Page

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    TOSHIBA
Part No. TK9A20DA
OCR Text ...) enhancement mode: v th = 1.5 to 3.5 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal c...220sis 2014-01-06 rev.2.0 tk9a20da 2 5. 5. 5. 5. thermal characteristics thermal characterist...
Description Power MOSFET (N-ch 150V<VDSS≤250V)

File Size 264.36K  /  9 Page

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