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  to-220-3l Datasheet PDF File

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    Silan Microelectronics
Part No. SVD1N80B SVD1N80T
OCR Text ... material packing svd1n80m to-251-3l svd1n80m pb free tube svd1n80t to-220-3l svd1n80t pb free tube svd1n80b to-92-3l 1n80b pb free bulk svd1n80btr to-92-3l 1n80b pb free ammo svd1n80f to-220f-3l svd1n80f pb ...
Description 800V N-CHANNEL MOSFET

File Size 704.26K  /  10 Page

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    Wuxi NCE Power Semicond...
Part No. NCE1450
OCR Text ...d trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. g...220-3l top view package marking and ordering information device marking device device pack...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 352.97K  /  7 Page

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    Wuxi NCE Power Semicond...
Part No. NCE1579C
OCR Text ...d trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. g...220-3l top view package marking and ordering information device marking device device pack...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 333.66K  /  7 Page

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    Wuxi NCE Power Semicond...
Part No. NCE1530C
OCR Text ...d trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. g...220-3l top view package marking and ordering information device marking device device pack...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 306.50K  /  7 Page

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    Wuxi NCE Power Semiconducto...
Part No. NCE80H16
OCR Text ...d trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. g...220-3l top view package marking and ordering information device marking device device pack...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 315.15K  /  7 Page

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    Wuxi NCE Power Semiconducto...
Part No. NCE70H13
OCR Text ...d trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. g...220-3l top view package marking and ordering information device marking device device pack...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 365.03K  /  7 Page

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    Wuxi NCE Power Semiconducto...
Part No. NCE70H12
OCR Text ...d trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. g...220-3l top view package marking and ordering information device marking device device pack...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 327.90K  /  7 Page

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    Wuxi NCE Power Semiconducto...
Part No. NCE60P50
OCR Text ...d trench technology and design to provide excellent r ds(on) with low gate charge .this device is well suited for high current load appli...220-3l top view package marking and ordering information device marking device device pack...
Description NCE P-Channel Enhancement Mode Power MOSFET

File Size 316.70K  /  7 Page

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    Wuxi NCE Power Semiconducto...
Part No. NCE20H18
OCR Text ...d trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. g...220-3l top view package marking and ordering information device marking device device pack...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 318.23K  /  7 Page

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    Wuxi NCE Power Semiconducto...
Part No. NCE0260
OCR Text ...ed trench technology and design to provide excellent rds(on) with low gate charge. it can be used in a wide variety of applications. g...220-3l top view package marking and ordering information device marking device device packa...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 321.09K  /  7 Page

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