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AD7776AR R3201427 K3210 G1210 LF147 P2023DP 74V1G07 AT93HC4
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  tmb Datasheet PDF File

For tmb Found Datasheets File :: 2475    Search Time::1.766ms    
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    NXP
Part No. 6N06T
OCR Text ... v gs 0 20 40 60 80 100 120 140 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1e-07 1e-05 1e-03 1e-01 1e+01 t / s zth / (k/w) 1e+02 3e+01 1e+01 3e+00 1e+00 3e-01 1e-01 3e-02 1e-02 0 0...
Description Search --To PHT6N06T

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    BYV32EB-200

NXP Semiconductors
Part No. BYV32EB-200
OCR Text ...rent square-wave pulse; = 0.5; tmb 115 C; both diodes conducting; see Figure 1; see Figure 2 Conditions Min Typ Max 200 20 Unit V A IRRM VESD trr repetitive peak reverse current tp = 2 s; = 0.001 electrostatic discharge voltage HBM...
Description Dual rugged ultrafast rectifier diode, 20 A, 200 V

File Size 124.93K  /  9 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. BLF242
OCR Text ...on temperature conditions up to tmb = 25 c min. - - - - -65 - max. 65 20 1 16 150 200 unit v v a w "c jc thermal resistance symbol rthj-mb rth mb-h parameter thermal resistance from junction to mounting base thermal resistance from mounting...
Description HF/VHF power MOS transistor

File Size 143.31K  /  4 Page

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    BTA416Y-600B BTA416Y-600C BTA416Y-800B BTA416Y-800C

NXP Semiconductors
Part No. BTA416Y-600B BTA416Y-600C BTA416Y-800B BTA416Y-800C
OCR Text ...B; BTA416Y-800C full sine wave; tmb 108 C; see Figure 4 and 5 full sine wave; Tj = 25 C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms I2t dIT/dt IGM PGM I2t for fusing tp = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s rate of ...
Description 16 A three-quadrant triacs insulated, high commutation, high temperature

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    BU2520AW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2520AW
OCR Text ....0 0.35 UNIT V V A A W V A s tmb 25 C IC = 6.0 A; IB = 1.2 A ICsat = 6.0 A; IB(end) = 0.85 A PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING V...
Description Silicon Diffused Power Transistor

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    BU2520A

NXP Semiconductors
Philips Semiconductors
Part No. BU2520A
OCR Text ....0 0.35 UNIT V V A A W V A s tmb 25 C IC = 6.0 A; IB = 1.2 A ICM = 6.0 A; IB(end) = 0.85 A PINNING - SOT93 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 2 3 e ...
Description Silicon Diffused Power Transistor

File Size 56.16K  /  7 Page

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    BUK752R3-40C

NXP Semiconductors
Part No. BUK752R3-40C
OCR Text ...Tj 25 C; Tj 175 C VGS = 10 V; tmb = 25 C; see Figure 1; see Figure 3; tmb = 25 C; see Figure 2 VGS = 10 V; ID = 25 A; VDS = 32 V; see Figure 15 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 12; see Figure 13 ID = 100 A; Vsup 40 V; RGS = 5...
Description N-channel TrenchMOS standard level FET

File Size 215.38K  /  14 Page

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    BU2520DW

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2520DW
OCR Text ...2 0.5 UNIT V V A A W V A V s tmb 25 C IC = 6.0 A; IB = 1.2 A IF = 6.0 A ICsat = 6.0 A; IB(end) = 1.0 A PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b Rbe 1 2 ...
Description Silicon Diffused Power Transistor(纭???e?????朵?绠?
Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247

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    BT258S-800LT

NXP Semiconductors N.V.
Part No. BT258S-800LT
OCR Text ...n-state current half sine wave; tmb 135 C; see Figure 1 all conduction angles; see Figure 4 and 5 half sine wave; Tj = 25 C prior to surge; see Figure 2 and 3 t = 10 ms t = 8.3 ms I2t dIT/dt IGM PGM PG(AV) Tstg Tj [1] Conditions Min...
Description SCR logic level, high temperature

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    BU2520D

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2520D
OCR Text ...2 0.5 UNIT V V A A W V A V s tmb 25 C IC = 6.0 A; IB = 1.2 A IF = 6.0 A ICM = 6.0 A; IB(end) = 1.0 A PINNING - SOT93 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b Rbe 1 ...
Description Silicon Diffused Power Transistor

File Size 49.01K  /  6 Page

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