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  stm-1 Datasheet PDF File

For stm-1 Found Datasheets File :: 3535    Search Time::1.094ms    
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    MTP3055VL MTP3055VL_D ON2587

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055VL MTP3055VL_D ON2587
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Single Pulse (tp 50 s) Drain Curren...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM
From old datasheet system

File Size 161.53K  /  8 Page

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    MTP3055 MTP3055V MTP3055V_D ON2588

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-Repetitive (tp 10 ms) Drain Cur...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS是功率场效应晶体02安培的RDSon)\u003d 0.15欧姆
From old datasheet system

File Size 160.18K  /  8 Page

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    MTP30N06VL MTP30N06VL_D ON2590

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP30N06VL MTP30N06VL_D ON2590
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Non-repetitive (tp 10 ms) Dra...
Description From old datasheet system
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

File Size 207.41K  /  8 Page

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    MTP30P06 MTP30P06V MTP30P06V_D ON2592

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP30P06 MTP30P06V MTP30P06V_D ON2592
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Non-repetitive (tp 10 ms) Dra...
Description TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培的RDSon)\u003d 0.080欧姆
From old datasheet system

File Size 190.77K  /  8 Page

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    MTP50N06EL MTP50N06

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50N06EL MTP50N06
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-Repetitive (tp 10 ms) Drain Cur...
Description TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 232.16K  /  8 Page

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    MTP50N06VL MTP50N06VL_D ON2618 MTP50N06

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06VL MTP50N06VL_D ON2618 MTP50N06
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...1.0 M) Gate-to-Source Voltage -- Continuous Gate-Source Voltage -- Non-repetitive (tp 10 ms) Drain ...
Description From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

File Size 195.44K  /  8 Page

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    MTP50N06 MTP50N06V MTP50N06V_D ON2619

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06 MTP50N06V MTP50N06V_D ON2619
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-Repetitive (tp 10 ms) Drain Cur...
Description From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 179.25K  /  8 Page

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    MTP50P03HDL ON2621 ON2620

MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50P03HDL ON2621 ON2620
OCR Text sTM Data Sheet HDTMOS E-FET.TM Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HD...1.0 M) Gate-Source Voltage -- Continuous -- Non-Repetitive (tp 10 ms) Drain Current -- Continuous D...
Description TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM
From old datasheet system

File Size 128.25K  /  8 Page

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    MTP52N06VL MTP52N06VL_D ON2624 ON2623

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP52N06VL MTP52N06VL_D ON2624 ON2623
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Non-repetitive (tp 10 ms) Dra...
Description TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM
From old datasheet system

File Size 162.64K  /  8 Page

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    MTP52N06V MTP52N06V_D ON2625 ON2622

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP52N06V MTP52N06V_D ON2625 ON2622
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-Repetitive (tp 10 ms) Drain Cur...
Description TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM
From old datasheet system

File Size 159.45K  /  8 Page

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For stm-1 Found Datasheets File :: 3535    Search Time::1.094ms    
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