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  rg-58 u Datasheet PDF File

For rg-58 u Found Datasheets File :: 1680    Search Time::1.438ms    
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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...- VDD = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O u RC E ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRFR3412 IRFU3412

IRF[International Rectifier]
Part No. IRFR3412 IRFu3412
OCR Text ...- VDD = 50V --- ID = 29A ns --- RG = 6.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- ...58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2...
Description 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
SMPS MOSFET

File Size 137.36K  /  10 Page

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    IRF741307 IRF7413TR

International Rectifier
Part No. IRF741307 IRF7413TR
OCR Text ...v/dt Rating Fast Switching 100% RG Tested S S S G 1 2 3 4 8 7 A A D D D D VDSS = 30V RDS(on) = 0.011 6 5 Description Fifth Ge...58 2.5 0.02 260 5.0 -55 to +150 units V A W mW/C mJ V/ns C c e d Junction and Storag...
Description ultra Low On-Resistance
HEXFET POWER MOSFET

File Size 236.65K  /  9 Page

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    Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
Part No. R2486-04 R2486 R2486-01 R2486-02 R2486-03
OCR Text ... DY10 DY9 DY8 DY7 4 -H.V: RG-174/u 2R 2R 20 1 1.6 84 MAX. 1R : 180 k 1/2 W 2R : 360 k 1/2 W C1 : 0.002 F/2 kV C2 : 0.01 F/500 V 2R C3 : 0.01 F/500 V 2R 2R C3 10 k 2R DY6 DY5 DY4 DY3 DY2 DY1 2R 2R F K Y...
Description POSITION-SENSITIVE PHOTOMuLTIPLIER TuBES WITH CROSSED WIRE ANODES 位置灵敏光电倍增管带交叉钢丝阳极

File Size 521.10K  /  8 Page

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    IRF7413PBF

International Rectifier
Part No. IRF7413PBF
OCR Text ...v/dt Rating Fast Switching 100% RG Tested Lead-Free HEXFET(R) Power MOSFET S S S G 1 8 A A D D D D 2 7 VDSS = 30V RDS(on) =...58 2.5 units V c A W mW/C mJ V/ns C Power Dissipation Linear Derating Factor Single Pul...
Description HEXFET Power MOSFET

File Size 209.26K  /  9 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...- VDD = 38V --- ID = 43A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cente...58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O u RC E ...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRLR8103V

IRF[International Rectifier]
Part No. IRLR8103V
OCR Text ...ent applications G D * 100% RG Tested Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unpreced...58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOuRCE 4 - DRAIN -B1.52 (.060) 1...
Description N-Channel Application-Specific MOSFETs

File Size 148.37K  /  8 Page

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    SIHFP31N50L SIHFP31N50L-E3

Vishay Siliconix
Part No. SIHFP31N50L SIHFP31N50L-E3
OCR Text .... Starting TJ = 25 C, L = 1 mH, RG = 25 , IAS = 31 A (see fig. 12). c. ISD 31 A, dI/dt 422 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. ...58 100 - VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V , f = 1.0 MHz VGS = 0 V VDS =...
Description Power MOSFET

File Size 155.50K  /  8 Page

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    IRLL024NPBF IRLL024NPBF-15

International Rectifier
Part No. IRLL024NPBF IRLL024NPBF-15
OCR Text ... VDD = 28V --- ID = 1.9A ns --- RG = 24 --- RD = 15 , See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain ...58 ns TJ = 25C, IF = 1.9A --- 63 94 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on...
Description    ADVANCED PROCESS TECHNOLOGY
HEXFET Power MOSFET

File Size 141.70K  /  8 Page

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