rg-210 u pdf Datasheet P8 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : LA7875N 30150 W49F002A SF2N2432 BDX87B MHV2812D VP2204ND HFH10G
	Product Description
	Full Text Search

rg-210 u Datasheet PDF File

For rg-210 u Found Datasheets File :: 1415 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				NEC[NEC]
Part No.	2SK1399 D14770EJ2V0DS00 2SK1399-L 2SK1399-T2B
OCR Text	....0 V ID = 20 mA VGS(on) = 3.0 V RG = 10 , RL = 150 0.9 20 1.2 38 22 14 8 7 3 15 100 30 35 40 20 MIN. TYP. MAX. 10 5.0 1.5 uNIT A A V mS...210 240 Tc - Case Temperature - C TA - Ambient Temperature - C DRAIN CuRRENT vs. DRAIN T...
Description	N-channel MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING From old datasheet system
File Size	44.82K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG40N60C3 FN4472
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 3. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS ...210 2.4 4 0.43 uNITS ns ns ns ns J mJ mJ oC/W Typical Performance Curves 80 ICE , DC COLLECTOR ...
Description	75A/ 600V/ uFS Series N-Channel IGBT 75A, 600V, uFS Series N-Channel IGBT From old datasheet system
File Size	78.15K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7342
OCR Text	... -28V 10 15 ID = -1.0A ns 43 64 RG = 6.0 22 32 RD = 16, 690 --- VGS = 0V 210 --- pF VDS = -25V 86 --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Di...
Description	Power MOSFET
File Size	133.26K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7477
OCR Text	...- VDD = 15V --- ID = 11A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz Avalanche Characteristics Symbol E...210 V ns nC ns nC VSD trr Qrr trr Qrr --- 0.80 --- 0.65 --- 91 --- 130 --- 90 --- 140 2 ...
Description	SMPS MOSFET
File Size	158.98K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	uPA1851 uPA1851GR-9JG PA1851 D12733EJ2V0DS00
OCR Text	... V ID = -2.0 A VGS(on) = -4.0 V RG = 10 VDD = -10 V ID = -2.5 A VGS = -4.0 V IF = 2.5 A, VGS = 0 V IF = 2.5 A, VGS = 0 V di/dt = 20 A / s -...210 250 MIN. TYP. MAX. -10 ! 10 uNIT A A V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC ...
Description	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING From old datasheet system
File Size	63.43K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	uPA1914 uPA1914TE PA1914
OCR Text	...5 V ID = -2.5 A VGS(on) = -10 V RG = 10 VDD= -24 V ID = -4.5 A VGS = -10 V IF = 4.5 A, VGS = 0 V IF = 4.5 A, VGS = 0 V di/dt = 100 A/s -1.0 1 -1.6 7.1 43 58 64 589 210 86 546 148 65 16 57 63 80 11 1.5 2.8 0.88 22 11 57 86 96 MIN. TYP. MAX....
Description	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	65.27K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	uPA1915 uPA1915TE PA1915 G14761EJ1V0DS00
OCR Text	... V ID = -2.5 A VGS(on) = -4.0 V RG = 10 VDD = -16 V ID = -4.5 A VGS = -4.0 V IF = 4.5 A, VGS = 0 V -0.5 3 -1.1 8.8 45 47 61 67 820 210 100 16 14 58 46 5.0 2.0 2.5 0.86 55 58 82 90 MIN. TYP. MAX. -10 10 -1.5 uNIT A A V S m m m m pF pF p...
Description	From old datasheet system P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	64.69K / 8 Page	View it Online	Download Datasheet

				Samsung semiconductor FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF634B IRFS634B IRF634BFP001
OCR Text	... 5) VDD = 125 V, ID = 8.1 A, RG = 25 (Note 4, 5) -------- 15 75 100 65 29 4.2 14 40 160 210 140 38 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dr...
Description	250V N-Channel B-FET / Substitute of IRF634 & IRF634A 250V N-Channel MOSFET
File Size	856.87K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRFZ48N IRFZ48
OCR Text	... = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm fr...210 1.2 - uNIT A A V V ns C AVALANCHE LIMITING VALuE SYMBOL WDSS PARAMETER Drain-source non-r...
Description	N-channel enhancement mode TrenchMOS transistor 64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	64.61K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ48 IRFZ48R
OCR Text	...- VDD = 30V --- ID = 72A ns --- RG = 9.1 --- RD = 0.34, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 D S Source-Drain Ratings a...
Description	Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A)
File Size	135.37K / 8 Page	View it Online	Download Datasheet

For rg-210 u Found Datasheets File :: 1415 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |