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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXFT28N50F IXFH28N50 IXFH28N50F
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| OCR Text |
...he Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFH 28N50F VDSS IXFT 28N50F ID25 RDS(on)
= 500V = 28A = 190m
trr 250 ns
...187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
... |
| Description |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching 28 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
HiPerRF Power MOSFETs F-Class: MegaHertz Switching HiPerRF功率MOSFET F级：兆赫开
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| File Size |
102.89K /
2 Page |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXTK180N15
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| OCR Text |
...t 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C
Maximum ratings 150 150 20 30 180 75 720 90 64 3.0 5 560 -55 ... +150 150 -55 ... +150 V...187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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| Description |
High Current MegaMOSTMFET 180 A, 150 V, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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| File Size |
84.53K /
2 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXFH80N20Q IXFK80N20Q IXFT80N20Q
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| OCR Text |
... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q
VDSS ID25
RDS(on) trr
= 200 V = 80 A = 28 mW...187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
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| File Size |
69.47K /
2 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXFX32N50Q IXFK30N50Q IXFK32N50Q IXFX30N50Q
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| OCR Text |
... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
l l
1.6 m...187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXFK 30N50Q IXFX 30N50Q
Figure 1. Output Chara... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-264AA
TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|32AI(D)|TO-247VAR
HIPERFET POWER MOSFETS Q-CLASS
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| File Size |
110.94K /
4 Page |
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IXYS[IXYS Corporation]
ETC
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| Part No. |
IRFP470
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| OCR Text |
... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
Maximum Ratings 500 500 20 30 24 96 24 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A ...187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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| Description |
N-Channel Enhancement Mode MegaMOS FET
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| File Size |
46.17K /
2 Page |
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IXYS Corporation
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| Part No. |
IXGH20N30
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| OCR Text |
...C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25C
Maximum Ratings 300 300 20 30 40 20 80 ICM = 40 @ 0...187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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| Description |
HiPerFAST IGBT
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| File Size |
33.88K /
2 Page |
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IXYS Corporation
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| Part No. |
IXGH20N60B
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| OCR Text |
...C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25C
Maximum Ratings 600 600 20 30 40 20 80 ICM = 40 @ 0...187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXGH 20N60B ... |
| Description |
HiPerFAST IGBT
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| File Size |
79.75K /
4 Page |
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IXYS Corporation
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| Part No. |
IXGH20N60 IXGH20N60A
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| OCR Text |
..., 1 ms VGE = 15 V, T VJ = 125C, RG = 82 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 600 600 20 30 40 20 80 ICM = 40 @ 0.8...187,117 5,237,481 5,486,715 5,381,025
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| Description |
Low VCE(sat) IGBT, High speed IGBT
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| File Size |
49.71K /
2 Page |
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Price and Availability
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