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Macronix International Co., Ltd. PROM
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| Part No. |
MX26L1620XAI-12 MX26L1620XBI-90 MX26L1620XAC-90 MX26L1620XAI-90
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| OCR Text |
...sequence nor to verify the data pro- grammed. the typical chip programming time at room temperature of the mx26l1620 is less than 20 second...electron injec- tion. during a program cycle, the state-machine will control the program sequences a... |
| Description |
JT 42C 42#22 SKT PLUG 16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
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| File Size |
689.29K /
36 Page |
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PROM Macronix International Co., Ltd.
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| Part No. |
MX26L3220XAI-12 MX26L3220XBI-90 MX26L3220XAI-90
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| OCR Text |
...sequence nor to verify the data pro- grammed. the typical chip programming time at room temperature of the mx26l3220 is less than 90 second...electron injec- tion. during a program cycle, the state-machine will control the program sequences a... |
| Description |
32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM Circular Connector; No. of Contacts:55; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-35 RoHS Compliant: No
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| File Size |
1,141.53K /
38 Page |
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Spansion Inc. Spansion, Inc.
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| Part No. |
AM75PDL193CHH70I AM75PDL191CHH70I AM75PDL191CHH0402
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| OCR Text |
...uiring only two write cycles to pro- gram data instead of four. device erasure occurs by execut- ing the erase command sequence. the host s...electron injection. chip enable configuration ce#f1 control ce#f2 control bank 1a 48 mbit (32 kw x 9... |
| Description |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory SPECIALTY MEMORY CIRCUIT, PBGA73
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| File Size |
1,276.02K /
136 Page |
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Spansion, Inc. SPANSION LLC
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| Part No. |
AM29LV320MB95REC AM29LV320MB95REI AM29LV320MT95REC AM29LV320MB95RED AM29LV320MT90REC
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| OCR Text |
...dresses and data needed for the pro- gramming and erase operations. the sector erase architecture allows memory sec- tors to be erased and...electron injection.
26518c3 january 31, 2007 am29lv320mt/b 3 data sheet mirrorbit 32 mbit device f... |
| Description |
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit3.0 Volt-only Boot Sector Flash Memory 2M X 16 FLASH 3V PROM, 95 ns, PDSO48 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit??3.0 Volt-only Boot Sector Flash Memory
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| File Size |
878.04K /
63 Page |
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it Online |
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Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
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| Part No. |
29F040C-70 29F040C-90 29F040C-55 MX29F040CQI-70G MX29F040CTI-90 MX29F040CTI-90G MX29F040CTI-70 MX29F040CPI-90G MX29F040CPI-70G
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| OCR Text |
...sequence nor to verify the data pro- grammed. the typical chip programming time at room temperature of the mx29f040c is less than 4.5 sec- ...electron injec- tion. during a program cycle, the state-machine will control the program sequences a... |
| Description |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 4分位[12k × 8] CMOS单电5V只等于部门闪
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| File Size |
594.06K /
38 Page |
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it Online |
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Macronix International Co., Ltd. PROM MACRONIX INTERNATIONAL CO LTD
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| Part No. |
29LV160C-55R 29LV160C-70 29LV160C-90 MX29LV160CTMI-55Q MX29LV160CTMI-55R MX29LV160CBXBI-55R MX29LV160CTXBI-55R MX29LV160CTXBC-70G MX29LV160CTXBC-90G MX29LV160CTMC-55Q MX29LV160CTTI-55Q MX29LV160CBTI-55Q MX29LV160CBXEC-55Q MX29LV160CTXEC-55Q MX29LV160CBXBC-55Q MX29LV160CBTC-55Q MX29LV160CTXEI-55Q MX29LV160CBXEI-55Q MX29LV160CBXBI-55Q MX29LV160CTXBI-55Q MX29LV160CTXBC-55Q MX29LV160CTXBC-55R MX29LV160CBXBC-55R MX29LV160CTXEC-90 MX29LV160CTXEI-90G MX29LV160CTXEC-70G MX29LV160CTXEC-55R MX29LV160CBXEI-90 MX29LV160CBXEI-90G MX29LV160CTMI-70G MX29LV160CBTC-90 MX29LV160CBMI-90G MX29LV160CBXBC-90G MX29LV160CBTC-90G MX29LV160CTTI-90G MX29LV160CBXEC-70G MX29LV160CBTI-90 MX29LV160CBTI-55R
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| OCR Text |
...tary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v.
2 p...electron injection. during a program cycle, the state-machine will control the program sequences and... |
| Description |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PBGA48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PDSO44 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO44 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PBGA48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
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| File Size |
785.80K /
66 Page |
View
it Online |
Download Datasheet
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