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    Macronix International Co., Ltd.
Part No. 29F004T-55 29F004T-70 29F004T-90 MX29F004TQC-12G MX29F004TQC-70G MX29F004TQC-90G
OCR Text ...mming algorithm. the automatic pro- gramming algorithm makes the external system do not need to have time out sequence nor to verify the d...electron injection. during a program cycle, the state-machine will control the program sequences and...
Description 4M-BIT [512KX8] CMOS FLASH MEMORY

File Size 600.58K  /  39 Page

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    Macronix International Co., Ltd.
PROM
Part No. MX26L1620XAI-12 MX26L1620XBI-90 MX26L1620XAC-90 MX26L1620XAI-90
OCR Text ...sequence nor to verify the data pro- grammed. the typical chip programming time at room temperature of the mx26l1620 is less than 20 second...electron injec- tion. during a program cycle, the state-machine will control the program sequences a...
Description JT 42C 42#22 SKT PLUG
16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM

File Size 689.29K  /  36 Page

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    PROM
Macronix International Co., Ltd.
Part No. MX26L3220XAI-12 MX26L3220XBI-90 MX26L3220XAI-90
OCR Text ...sequence nor to verify the data pro- grammed. the typical chip programming time at room temperature of the mx26l3220 is less than 90 second...electron injec- tion. during a program cycle, the state-machine will control the program sequences a...
Description    32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
Circular Connector; No. of Contacts:55; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-35 RoHS Compliant: No

File Size 1,141.53K  /  38 Page

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    Macronix International Co., Ltd.
http://
Part No. MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26L6420XBI-90 MX26L6420XAI-90 MX26L6420TC-90 MX26L6420XBC-90 MX26L6420XAC-90 MX26L6420MC-90 MX26L6420MC-12
OCR Text ...sequence nor to verify the data pro- grammed. the typical chip programming time at room temperature of the mx26l6420 is less than 150 sec- ...electron injec- tion. during a program cycle, the state-machine will control the program sequences a...
Description    64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MICA RoHS Compliant: No
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44

File Size 1,259.93K  /  39 Page

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    Spansion Inc.
Spansion, Inc.
Part No. AM75PDL193CHH70I AM75PDL191CHH70I AM75PDL191CHH0402
OCR Text ...uiring only two write cycles to pro- gram data instead of four. device erasure occurs by execut- ing the erase command sequence. the host s...electron injection. chip enable configuration ce#f1 control ce#f2 control bank 1a 48 mbit (32 kw x 9...
Description 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory SPECIALTY MEMORY CIRCUIT, PBGA73

File Size 1,276.02K  /  136 Page

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    Spansion, Inc.
SPANSION LLC
Part No. AM29LV320MB95REC AM29LV320MB95REI AM29LV320MT95REC AM29LV320MB95RED AM29LV320MT90REC
OCR Text ...dresses and data needed for the pro- gramming and erase operations. the sector erase architecture allows memory sec- tors to be erased and...electron injection. 26518c3 january 31, 2007 am29lv320mt/b 3 data sheet mirrorbit 32 mbit device f...
Description 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit3.0 Volt-only Boot Sector Flash Memory 2M X 16 FLASH 3V PROM, 95 ns, PDSO48
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit??3.0 Volt-only Boot Sector Flash Memory

File Size 878.04K  /  63 Page

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    Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
Part No. 29F040C-70 29F040C-90 29F040C-55 MX29F040CQI-70G MX29F040CTI-90 MX29F040CTI-90G MX29F040CTI-70 MX29F040CPI-90G MX29F040CPI-70G
OCR Text ...sequence nor to verify the data pro- grammed. the typical chip programming time at room temperature of the mx29f040c is less than 4.5 sec- ...electron injec- tion. during a program cycle, the state-machine will control the program sequences a...
Description 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 4分位[12k × 8] CMOS单电5V只等于部门闪

File Size 594.06K  /  38 Page

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    K8S6415EBB

Samsung semiconductor
Part No. K8S6415EBB
OCR Text ...locks with independent hardware pro- tection. this block architecture provides highly flexible erase and program capability. the k8s6415e n...electron (che) injection mecha- nism which is used to program eproms. t he device is erased elec tri...
Description (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory

File Size 743.97K  /  39 Page

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    AM29LV652D AM29LV652DU90RMAF AM29LV652DU12RMAF AM29LV652DU12RMAK AM29LV652DU12RMAE AM29LV652DU12RMAI AM29LV652DU90RMAE

Spansion Inc.
SPANSION LLC
Advanced Micro Devices
Part No. AM29LV652D AM29LV652DU90RMAF AM29LV652DU12RMAF AM29LV652DU12RMAK AM29LV652DU12RMAE AM29LV652DU12RMAI AM29LV652DU90RMAE
OCR Text ...devices. the device can also be pro- grammed in standard eprom programmers. the am29lv652d offers access times of 90 and 120 ns and is offer...electron injection. october 29, 2004 am29lv652d 3 preliminary table of contents distinctive chara...
Description 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control
Varistor; Package/Case:0805; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.6V; Output Current Max:1A; Output Voltage Max:18V

File Size 709.43K  /  55 Page

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    Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
Part No. 29LV160C-55R 29LV160C-70 29LV160C-90 MX29LV160CTMI-55Q MX29LV160CTMI-55R MX29LV160CBXBI-55R MX29LV160CTXBI-55R MX29LV160CTXBC-70G MX29LV160CTXBC-90G MX29LV160CTMC-55Q MX29LV160CTTI-55Q MX29LV160CBTI-55Q MX29LV160CBXEC-55Q MX29LV160CTXEC-55Q MX29LV160CBXBC-55Q MX29LV160CBTC-55Q MX29LV160CTXEI-55Q MX29LV160CBXEI-55Q MX29LV160CBXBI-55Q MX29LV160CTXBI-55Q MX29LV160CTXBC-55Q MX29LV160CTXBC-55R MX29LV160CBXBC-55R MX29LV160CTXEC-90 MX29LV160CTXEI-90G MX29LV160CTXEC-70G MX29LV160CTXEC-55R MX29LV160CBXEI-90 MX29LV160CBXEI-90G MX29LV160CTMI-70G MX29LV160CBTC-90 MX29LV160CBMI-90G MX29LV160CBXBC-90G MX29LV160CBTC-90G MX29LV160CTTI-90G MX29LV160CBXEC-70G MX29LV160CBTI-90 MX29LV160CBTI-55R
OCR Text ...tary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. 2 p...electron injection. during a program cycle, the state-machine will control the program sequences and...
Description 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PBGA48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PDSO44
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO44
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PBGA48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48

File Size 785.80K  /  66 Page

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