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ATMEL[ATMEL Corporation]
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| Part No. |
TS87C51RD2 TS83C51RD2
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| OCR Text |
...icon Number of Layers Thickness Poly 1 Thickness Poly 2 Metal Number of Layers Material: Layer 1 Thickness Layer 2 Thickness Layer 3 Thickness
2 (Z94), 1 (Z92) 2000A 3000A
2 AlCu 5150A 5150A 7650A
Passivation Material Thickness
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| Description |
Qualification Package TS87C51RD2 / TS83C51RD2 CMOS 0.5Um
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| File Size |
4,007.60K /
17 Page |
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ANALOG DEVICES INC
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| Part No. |
ADXL203BE-REEL
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| OCR Text |
...ccelerom eter. they contain a poly s ilicon surface-m i crom achined sensor and signal conditioning circuitry to im plem ent an open loo...silicon wafer. poly silicon springs suspend t h e s t r u c t u r e over the surface of the waf... |
| Description |
SPECIALTY ANALOG CIRCUIT, QCC8
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| File Size |
360.10K /
7 Page |
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it Online |
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ST Microelectronics
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| Part No. |
LIS2L01
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| OCR Text |
...rocess called ThELMA (Thick Epi-Poly layer for Microactuators and Accelerometers) developed by ST to produce inertial sensor and actuator in silicon. The IC interface instead is manufactured using a CMOS process that allow high level of int... |
| Description |
INERTIAL SENSOR
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| File Size |
187.22K /
6 Page |
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Vishay
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| Part No. |
AN820
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| OCR Text |
...egrate an electrically isolated poly-silicon diode on the same die as the MOSFET (Figure 1). Because the MOSFET and the diode are so close together, the diode temperature tracks the MOSFET temperature. The forward voltage drop of the polysi... |
| Description |
Temperature Sensing MOSFET
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| File Size |
48.18K /
6 Page |
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ATMEL[ATMEL Corporation]
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| Part No. |
MH1RT MH1242
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| OCR Text |
...c Effective Channel Length Gate Poly Width Gate Poly Spacing Metal 1 Metal 1 Metal 2 Metal 2 Metal 3 Metal 3 Metal 4 Metal 4 Width Spacing Width Spacing Width Spacing Width Spacing 80m * 100m 0.35m 0.35m 0.49m 0.42m 0.49m 0.56m 0.49m 0.56m ... |
| Description |
Radiation Tolerant 0.35 um CMOS
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| File Size |
781.25K /
22 Page |
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it Online |
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