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  non-repetitive Datasheet PDF File

For non-repetitive Found Datasheets File :: 52669    Search Time::1.75ms    
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    DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG

DYNEX SEMICONDUCTOR LTD
DYNEX[Dynex Semiconductor]
Part No. DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG
OCR Text ...M I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max....
Description Rectifier Diode

File Size 96.08K  /  7 Page

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    DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49

DYNEX[Dynex Semiconductor]
Part No. DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49
OCR Text ...M I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max....
Description Rectifier Diode

File Size 96.53K  /  7 Page

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    DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60

DYNEX[Dynex Semiconductor]
Part No. DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text ...M I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max....
Description Rectifier Diode

File Size 94.33K  /  7 Page

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    48CTQ060STRL 48CTQ060STRR 48CTQ060-1TRR 48CTQ060-1TRL

Vishay Siliconix
Part No. 48CTQ060STRL 48CTQ060STRR 48CTQ060-1TRR 48CTQ060-1TRL
OCR Text ...orm 40 A Maximum peak one cycle non-repetitive surge current per leg See fig. 7 non-repetitive avalanche energy per leg Repetitive avalanche current per leg 1000 260 13 1.50 mJ A SYMBOL TEST CONDITIONS VALUES 20 UNITS TJ = 25 C, IAS = 1....
Description Schottky Rectifier, 2 x 20 A

File Size 124.57K  /  6 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ... (IEC 134) SYMBOL PARAMETER EAS non-repetitive avalanche energy Peak non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 7.8 A; tp = 300 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    48CTQ060-1TRLPBF 48CTQ060STRLPBF 48CTQ060STRRPBF 48CTQ060SPBF 48CTQ060-1PBF 48CTQ060-1TRRPBF

Vishay Siliconix
Part No. 48CTQ060-1TRLPBF 48CTQ060STRLPBF 48CTQ060STRRPBF 48CTQ060SPBF 48CTQ060-1PBF 48CTQ060-1TRRPBF
OCR Text ...orm 40 A Maximum peak one cycle non-repetitive surge current per leg See fig. 7 non-repetitive avalanche energy per leg Repetitive avalanche current per leg 1000 260 13 1.50 mJ A SYMBOL TEST CONDITIONS VALUES 20 UNITS TJ = 25 C, IAS = 1....
Description Schottky Rectifier, 2 x 20 A

File Size 127.56K  /  6 Page

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    40L15CTPBF08

Vishay Siliconix
Part No. 40L15CTPBF08
OCR Text ...UNITS Maximum peak one cycle non-repetitive surge current per leg See fig. 7 non-repetitive avalanche energy per leg Repetitive avalanche current per leg * Pb containing terminations are not RoHS compliant, exemptions may apply Docume...
Description Schottky Rectifier, 2 x 20 A

File Size 113.00K  /  6 Page

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    30PT100

Vishay Siliconix
Part No. 30PT100
OCR Text ... current Maximum peak one cycle non-repetitive surge current non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 C, IAS = 3 A, L = 30 mH Limited by frequency of oper...
Description High Performance Schottky Generation 5.0, 30 A

File Size 101.59K  /  7 Page

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    CMS06-13

Toshiba Semiconductor
Part No. CMS06-13
OCR Text ...e cycle surge forward current (non-repetitive) i fsm 40 (50 hz) a junction temperature t j ?40~125 c storage temperature t stg ?40~150 c note 1: t ? = 82.8c: rectangular waveform ( = 180), v r = 15 v note 2: using...
Description TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

File Size 157.31K  /  5 Page

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    CMS03-13

Toshiba Semiconductor
Part No. CMS03-13
OCR Text ...e cycle surge forward current (non-repetitive) i fsm 40 (50 hz) a junction temperature t j ?40~150 c storage temperature t stg ?40~150 c note 1: device mounted on a ceramic board (board size: 50 mm 50 mm, soldering land: ...
Description TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

File Size 159.06K  /  5 Page

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