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For mobility Found Datasheets File :: 592 Search Time::2.64ms
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				MIMIX[Mimix Broadband]
Part No.	CDQ0303-QS CDQ0303-QS-0G00 CDQ0303-QS-0G0T PB-CDQ0303-QS-00B0 PB-CDQ0303-QS-00A0
OCR Text	...aAs Pseudomorphic High Electron mobility Transistor (pHEMT) High Gain: 25 dB @ 900 MHz 21 dB @ 1900 MHz Low Noise Figure: 0.6 dB @ 900 MHz 0.7 dB @ 1900 MHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600m Gate Width: 50 Output Impedance Exce...
Description	500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier
File Size	530.80K / 14 Page	View it Online	Download Datasheet

				Filtronic Compound Semicond... FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP1500P100
OCR Text	...As) pseudomorphic High Electron mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate res...
Description	PACKAGED 1W POWER PHEMT KU BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
File Size	47.10K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4851A
OCR Text	...he MGF4851A HEMT (High Electron mobility Transistor) is designed for use in S to K band amplifiers and oscillators. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB Glp=...
Description	SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
File Size	133.53K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4954A MGF4953A
OCR Text	...r-low noise HEMT (High Electron mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES Low noise figure @ f=12GHz MGF4953A : NFmin....
Description	SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
File Size	203.88K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4934AM
OCR Text	...r-low noise HEMT (High Electron mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	104.87K / 5 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LPA6836V
OCR Text	...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 360 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epit...
Description	MEDIUM POWER PHEMT WITH SOURCE VIAS
File Size	69.65K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4953B
OCR Text	...r-low noise HEMT (High Electron mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.)...
Description	SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package
File Size	116.27K / 5 Page	View it Online	Download Datasheet

				http:// FILTRONIC[Filtronic Compound Semiconductors]
Part No.	EB-FPM2750QFN-BAL FPM2750QFN EB-FPM2750QFN-SE
OCR Text	... of pseudomorphic High Electron mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25m process ensures class-leading noise performance. The use of a small footprint plastic package allows...
Description	LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
File Size	414.92K / 8 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)]
Part No.	MB88161PVB-G-ERE1 MGA-71543-BLKG MGA-71543-TR1G MGA-71543-TR2G MGA-7154304 MGA-71543-TR2 MGA-71543-BLK MGA-71543-TR1
OCR Text	...MT (Pseudomorphic High Electron mobility Transistor Technology). It is housed in the SOT343 (SC70 4-lead) package. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body M...
Description	Low Noise Amplifier with Mitigated Bypass Switch
File Size	254.23K / 24 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE32100001 NE321000
OCR Text	... InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NEC's stringent quality assurance and test procedures assure the highest r...
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
File Size	122.23K / 6 Page	View it Online	Download Datasheet

For mobility Found Datasheets File :: 592 Search Time::2.64ms
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