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International Rectifier, Corp.
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| Part No. |
IRG4PH40MD
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| OCR Text |
...lly different, the igbt being a minority carrier device. except for the p + substrate is virtually identical to that of a power mosfet, both devices share a similar polysilicon gate structure and p wells with n + source contacts. in both de... |
| Description |
Fit Rate / Equivalent Device Hours FIT等效器件小时
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| File Size |
107.54K /
35 Page |
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it Online |
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MOTOROLA INC
ON Semi
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| Part No. |
MTB75N05HD_D ON2454 MTB75N05HDT4
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| OCR Text |
...ode itself. The body diode is a minority carrier device, therefore it has a finite reverse recovery time, trr, due to the storage of minority carrier charge, QRR, as shown in the typical reverse recovery wave form of Figure 12. It is this s... |
| Description |
75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 75 AMPERES 50 VOLTS
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| File Size |
176.66K /
8 Page |
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it Online |
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ON Semi
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| Part No. |
MTDF2N06HD_D ON2527
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| OCR Text |
...ode itself. The body diode is a minority carrier device, therefore it has a finite reverse recovery time, trr, due to the storage of minority carrier charge, QRR, as shown in the typical reverse recovery wave form of Figure 11. It is this s... |
| Description |
DUAL TMOSPOWER MOSFET 1.5 AMPERES 60 VOLTS
From old datasheet system
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| File Size |
183.63K /
10 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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