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Alpha & Omega Semicondu...
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| Part No. |
AO4448L
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| OCR Text |
...acteristics units parameter typ max c/w r ja 31 59 40 v 25 gate-source voltage drain-source voltage 80 the ao4448l is fabricated with sdmos...80v mj avalanche current c 101 a 45 a i d 10 8 70 t a =25c t a =70c power dissipation b p d aval... |
| Description |
80V N-Channel MOSFET
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| File Size |
257.51K /
6 Page |
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Cystech Electonics Corp...
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| Part No. |
MTDE5P10N3-0-T1-G
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| OCR Text |
... ? symbol min. typ. max. unit te st conditions static bv dss - 10 0 - - v v gs =0v, i d = - 25 0 a v gs(th)...80v, v gs =0v - - - 25 v ds = - 80v, v gs =0v, tj=55 ? c * r ds(on) - 450 70 0 m ?... |
| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
520.74K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTD011N10RE3 MTD011N10RE3-0-UB-X
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| OCR Text |
...l resistance, junction-to-case, max r jc 1.5 thermal resistance, junction-to-ambient, max (note 2) r ja 60 c/w note : 1 . t...80v, v gs =0v i dss - - 5 a v ds =80v, v gs =0v, tj=55 c *r ds(on) - 9.9 13 m v ... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
347.93K /
8 Page |
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it Online |
Download Datasheet
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Cystech Electonics Corp...
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| Part No. |
MTA100N10RKJ3-0-T3-G
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| OCR Text |
...l resistance, junction-to-case, max r jc 4.1 50 (note) thermal resistance, junction-to-ambient, max r ja 110 c/...80v, v gs =0v i dss - - 25 a v ds =80v, v gs =0v, t j =125c - 108 140 v gs =10v, i d... |
| Description |
N -Channel Enhancement Mode Power MOSFET
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| File Size |
349.64K /
9 Page |
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it Online |
Download Datasheet
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Cystech Electonics Corp...
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| Part No. |
MTDA0N10AV8-0-T6-G
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| OCR Text |
...l resistance, junction-to-case, max r jc 8.3 thermal resistance, junction-to-ambient, max r ja 50 *2 c/w note : 1....80v, v gs =0v i dss - - 5 a v ds =80v, v gs =0v, tj=55 c - 74 98 v gs =10v, i d =3a... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
358.55K /
9 Page |
View
it Online |
Download Datasheet
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