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  imd Datasheet PDF File

For imd Found Datasheets File :: 3916    Search Time::1.687ms    
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    MRF19090 MRF19090R3 MRF19090SR3

Freescale Semiconductor, Inc
Part No. MRF19090 MRF19090R3 MRF19090SR3
OCR Text ...t 33 35 -- % imd -- - 30 - 28 dBc IRL -- - 12 -- dB P1dB -- 90 -- W MRF19090R3 MRF19090SR3 2 RF Device Data Freescale Semiconductor VBIAS + B1 + C13 + C14 + C19 C9 B3 ...
Description RF Power Field Effect Transistors

File Size 341.00K  /  8 Page

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    PH1819-4N

Tyco Electronics
Part No. PH1819-4N
OCR Text ...tions Class AB: -34 dBc Typ 3rd imd at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Gold Metallization System 4W PH1819-4N v2.00 ...
Description Wireless Bipolar Power Transistor, 4W 1.78 - 1.90 GHz

File Size 222.38K  /  3 Page

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    MRF9030MBR1 MRF9030MR1 MRF9030MR107

Freescale Semiconductor, Inc
Part No. MRF9030MBR1 MRF9030MR1 MRF9030MR107
OCR Text ...B Efficiency -- 41% (Two Tones) imd -- - 31 dBc * Integrated ESD Protection * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impe...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 525.39K  /  16 Page

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    AD1678-15

Analog Devices
Part No. AD1678-15
OCR Text ... such as sin + d ratio, thd and imd. these parameters are impor- tant in signal processing applications as they indicate the ad 1678's effect on the spectral content of the input signa1.the ad1678 offers a choice of digital interface format...
Description 12 BIT 200KSPS SAMPLING ADC

File Size 4,226.97K  /  12 Page

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    MRF284 MRF284LSR1 MRF284LR1

Freescale Semiconductor, Inc
Part No. MRF284 MRF284LSR1 MRF284LR1
OCR Text ...t 30 35 -- % imd -- - 32 - 29 dBc IRL -- - 15 -9 dB Gps 9 10.4 -- dB -- 35 -- % imd -- - 34 -- dBc IRL -- - 15 -9 dB Gps 8.5 ...
Description RF Power Field Effect Transistors

File Size 369.37K  /  12 Page

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    PTH31002

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTH31002
OCR Text ...GHz, f = 100 KHz TCASE = 25C imd (dBc) -45 -55 -65 -75 0 5 10 15 20 25 imd3 (dBc) -35 POUT = 8 W PEP -45 POUT = 4 W PEP -55 VDD = 28.0 V, TCASE = 25C f = 1.96 GHz, f = 100 KHz 30 35 19 22 25 28 Output Pow...
Description 30 Watts/ 1.9-2.0 GHz 50-Ohm Power Hybrid
30 Watts, 1.9-2.0 GHz 50-Ohm Power Hybrid
30 Watts, 1.9.0 GHz 50-Ohm Power Hybrid

File Size 205.01K  /  5 Page

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    STLC60133

STMicroelectronics
Part No. STLC60133
OCR Text ... Differential THD (2) dBc imd Single ended imd -54 -60 -70 -75 dBc Dimd Differential imd (2) -66 -72 5 dBc A 2 4 10 6 nV/ Hz mV V dB +10.8 600 1000 12 8 5 4 1.5 1400 16.2 10.7 7.5 5.3 2.0 V mA mA mA/Amp IB ...
Description XDSL LINE DRIVER

File Size 90.30K  /  9 Page

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    Infineon Technologies A...
Part No. PTFA092213EL-15
OCR Text ...ntermodulation distortion imd C32 dbc thermally-enhanced high power rf ldmos fets 220 w, 920 C 960 mhz description the ptfa092213el and ptfa092213fl are 220-watt, internally- matched ldmos fets designed for use in cell...
Description Thermally-Enhanced High Power RF LDMOS FETs

File Size 1,315.91K  /  10 Page

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    STM901-30 2879

ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STM901-30 2879
OCR Text ...Typ. Max. Un it BW GP dt * imd* -- Frequency Range Power Gain Double-Tone Efficiency Input VSWR Intermodulation Distortion Load Mismatch POUT = +44.7 dBm PEP POUT = +44.7 dBm PEP POUT = +44.7 dBm PEP POUT = +44.7 dBm PEP V = 26Vdc V...
Description RF Power Module Linear Base Station Applications(用于线性基站的RF功率模块)
From old datasheet system

File Size 144.90K  /  8 Page

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    Infineon Technologies A...
Part No. PTFA092201FV4R0XTMA1 PTFA092201E PTFA092201EF PTFA092201EV4R0 PTFA092201EV4R0XTMA1 PTFA092201EV4R250 PTFA092201EV4R250XTMA1 PTFA092201FV4R250 PTFA092201FV4R250XTMA1
OCR Text ...(%) -60 -55 -50 -45 -40 -35 -30 imd (dbc), acpr (dbc) imd acpr gain efficiency rf characteristics two-carrier wcdma measurements (not subject to production test?verified by design/characterization in infineon test fixture) v dd = 30 v, i...
Description Thermally-Enhanced High Power RF LDMOS FETs

File Size 7,329.65K  /  11 Page

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For imd Found Datasheets File :: 3916    Search Time::1.687ms    
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