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id-3.6a Datasheet PDF File

For id-3.6a Found Datasheets File :: 4025 Search Time::4.484ms
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				Chino-Excel Technology
Part No.	CEM3178
OCR Text	... otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C 20 7.6 30 2.0 -55 to 150 Maximum Power Dissipation Opera...3.5 3.8 2.3 1.2 30 20 60 20 13 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 15V, ID = 6A VDS = ...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	101.08K / 4 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CEM3172
OCR Text	... otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C 20 8.9 30 2.5 -55 to 150 Maximum Power Dissipation Opera...3.5 3.8 2.3 1.2 30 20 60 20 13 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 15V, ID = 6A VDS = ...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	101.29K / 4 Page	View it Online	Download Datasheet

				Anpec Electronics Coropration
Part No.	APM2054N
OCR Text	...ximum Ratings Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating 20 ...3 10 W 1.2 150 -55 to 150 C C Unit Parameter PD Maximum Power Dissipation TJ TSTG Max...
Description	N-Channel Enhancement Mode MOSFET
File Size	468.32K / 12 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	13N80
OCR Text	...e Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (...3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy ...
Description	Search --To FQA13N80
File Size	859.86K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	13N06L
OCR Text	...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy...
Description	Search --To FQB13N06L
File Size	694.21K / 9 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CEF07N7 CEB07N7
OCR Text	...V 700V 700V RDS(ON) 1.5 1.5 1.5 ID 6.6A 6.6A 6.6A d @VGS 10V 10V 10V CEP07N7/CEB07N7 CEF07N7 PRELIMINARY Super high dense cell design...3 -55 to 150 6.6 26 50 0.4 d d A A W W/ C C Maximum Power Dissipation @ TC = 25 C - Derate ab...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	409.65K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7416 IRFB7416 IRF7416TR
OCR Text	...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS EAS dv/dt TJ,TSTG Continuous Drain Current, VGS @ -10V Cont...3.1 A -45 -1.0 85 150 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction ...
Description	Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm) Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm) -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	112.47K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFL110
OCR Text	...= 100V RDS(on) = 0.54 G S ID = 1.5A Description Third Generation HEXFETs from International Rectifier provide the designer with th...3 Absolute Maximum Ratings Parameter ID @ Tc = 25C ID @ Tc = 100C IDM PD @Tc = 25C PD @TA = 25C...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
File Size	241.54K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	FR9024N
OCR Text	... -55V RDS(on) = 0.175 G S ID = -11A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing ...3.8 -10 -55 to + 150 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance...
Description	Search --To IRFR9024N
File Size	151.56K / 10 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CEM9926A
OCR Text	... otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C 12 6 35 2.0 -55 to 150 Maximum Power Dissipation Operati...3.5,2.5V 25 ID, Drain Current (A) ID, Drain Current (A) 8 VGS=2.0V 20 6 15 5...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	139.95K / 4 Page	View it Online	Download Datasheet

For id-3.6a Found Datasheets File :: 4025 Search Time::4.484ms
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