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For hexfets Found Datasheets File :: 1087    Search Time::7.313ms    
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    JANSR2N7389

International Rectifier
Part No. JANSR2N7389
OCR Text ...s P-Channel RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, Internatio...
Description TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

File Size 91.26K  /  4 Page

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    International Rectifier, Corp.
Part No. IRHN9150
OCR Text ... p-channel rad hard technology hexfets demonstrate e xcellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 3 x 10 5 rads (si). u nder identical pre- and post- radiation test conditions,...
Description HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管)

File Size 97.11K  /  8 Page

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    IRFI9634G

IRF[International Rectifier]
Part No. IRFI9634G
OCR Text ... Description Third Generation hexfets from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.Third Generation hexfets from Internat...
Description -250V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-250V Rds(on)=1.0ohm Id=-4.1A)
Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)

File Size 119.17K  /  8 Page

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    IRHM93160 IRHM9160

International Rectifier
Part No. IRHM93160 IRHM9160
OCR Text ...s P-Channel RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 3 X 105 Rads (Si). Under identical pre- and postradiation test conditions, Interna...
Description -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
HEXFET? TRANSISTOR

File Size 123.08K  /  8 Page

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    IRFR2605

International Rectifier
Part No. IRFR2605
OCR Text ...D = 19A S Fourth Generation hexfets from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
HEXFET? Power MOSFET

File Size 161.20K  /  8 Page

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    IRHN9230

IRF[International Rectifier]
Part No. IRHN9230
OCR Text ...s P-Channel RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 Rads (Si). Under identical pre- and post-radiation test conditions, Internati...
Description TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

File Size 87.57K  /  4 Page

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    JANSR2N7270 JANSF2N7270 JANSG2N7270

International Rectifier
Part No. JANSR2N7270 JANSF2N7270 JANSG2N7270
OCR Text ... rectifiers rad hard technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x10 6 rads(si). u nder identical pre- and post-irradiation test conditions, in...
Description 500V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
500V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
500V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package

File Size 310.75K  /  12 Page

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    IRHN93150 IRHN9150

International Rectifier
Part No. IRHN93150 IRHN9150
OCR Text ...s P-Channel RAD HARD technology hexfets demonstrate excellent threshold voltage stability at total radiation doses as high as 3 x 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-Channel RA...
Description HEXFET? TRANSISTOR

File Size 113.19K  /  8 Page

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    IRHF7310SE

International Rectifier
Part No. IRHF7310SE
OCR Text ...ier's (SEE) RAD HARD technology hexfets demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD hexfets retain identical electrical specification...
Description TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=4.5ohm, Id=1.15A)

File Size 84.65K  /  4 Page

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    IRHM93230 IRHM9230 IRHM9230-15

International Rectifier
Part No. IRHM93230 IRHM9230 IRHM9230-15
OCR Text ...s p-channel rad hard technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 rads (si). under identical pre- and post-radia- tion test conditions, inte...
Description Simple Drive Requirements
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package

File Size 104.17K  /  4 Page

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For hexfets Found Datasheets File :: 1087    Search Time::7.313ms    
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