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NXP Semiconductors N.V.
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| Part No. |
BUK9MTT-65PBB
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| OCR Text |
...tions min typ max unit fet1 and fet2 static characteristics r dson drain-source on-state resistance v gs =5v; i d =3a; t j =25c; see fig...18 s1 source 1 19 s1 source 1 20 d1 drain 1 10 20 11 1 003aaa745 fet1 fet2 g1 is1 s1 ks1 c1 g2 is2 s... |
| Description |
Dual TrenchPLUS FET Logic Level FET
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| File Size |
186.90K /
16 Page |
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SANYO
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| Part No. |
FTD2019A
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| OCR Text |
... w allowable power dissipation(fet2), p d -- w allowable power dissipation(fet1), p d -- w total dissipation 1 unit mounted on a ceramic board (1000mm 2 5 0.8mm) 1unit mounted on a ceramic board (1000mm 2 5 0.8mm) 1unit
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| Description |
Nch Nch
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| File Size |
38.28K /
4 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4932
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| OCR Text |
fet2(n-channel) v ds = 30v 30v i d = 11a (v gs =10v) 8a (v gs =10v) r ds(on) r ds(on) < 12.5m (v gs =10v) < 19m (vgs=...18 2 30 8 a 20 v 6.5 40 19 w v 12 absolute maximum ratings t a =25c unless otherwise noted max fe1 ... |
| Description |
Asymmetric Dual N-Channel MOSFET
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| File Size |
458.99K /
9 Page |
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it Online |
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Price and Availability
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